Oxide Semiconductor Transistor Modulation Circuit for Low Power RF Tags
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
RFID communication systems face challenges with high power consumption due to high off-state current in silicon-based transistors, leading to reduced reliability and shorter communication distances.
Innovation Solution
Employing transistors with oxide semiconductor layers having low hydrogen concentration, resulting in significantly reduced off-state current and improved power efficiency, which are used in modulation circuits within RF tags.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a transistor with silicon channel formation region is used in a modulation circuit, then the transistor can be easily manufactured with conventional processes, but the off-state current is high which increases power consumption
Solution Approach 1:
The patent changes the material parameter of the channel formation region from silicon to oxide semiconductor, which fundamentally alters the electrical characteristics. This material substitution enables extremely low off-state current (1×10^-13 A or less) while maintaining compatibility with conventional semiconductor manufacturing processes, thus resolving the contradiction between ease of manufacture and power consumption.
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor layer with conventional semiconductor materials. The oxide semiconductor layer is formed over a substrate and integrated with existing circuit components, creating a hybrid structure that leverages both the low-power properties of oxide semiconductors and the manufacturing advantages of conventional processes.
2Power
If a transistor with silicon channel formation region is used in a modulation circuit, then the transistor can provide sufficient current for communication, but the high off-state current reduces communication reliability
Solution Approach 1:
By changing the channel material to oxide semiconductor, the patent achieves a dramatic reduction in off-state current to 1×10^-13 A or less. This parameter change maintains adequate on-state current for communication while eliminating the reliability issues caused by leakage current, thus simultaneously satisfying both current requirements and reliability constraints.
3Speed
If a transistor with silicon channel formation region is used in a modulation circuit, then the circuit can operate at standard speeds, but the high power consumption reduces the maximum communication distance
Solution Approach 1:
The patent changes the channel material to oxide semiconductor, which provides extremely low off-state current (1×10^-13 A or less). This material parameter change significantly reduces power consumption while maintaining adequate operation speed, enabling extended communication distance without sacrificing operational performance.
Data Source
AI summary
A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.