Multi-Layer Oxide Semiconductor Transistor for Enhanced Photosensitivity
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Solution Overview
Problem
Transistors with oxide semiconductor layers have relatively low photosensitivity, making them less suitable for use in optical devices such as photo sensors, where improved sensitivity is required.
Innovation Solution
A transistor design incorporating a first oxide semiconductor layer with a wider energy band gap and a second oxide semiconductor layer with higher photosensitivity, separated by an insulating layer with high etch selectivity, enhances photosensing characteristics. The second oxide semiconductor layer has a narrower energy band gap and higher carrier density, while the insulating layer, made of silicon-based materials, facilitates easier etching and manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single oxide semiconductor layer is used in the transistor, then the transistor exhibits good operating characteristics with higher carrier mobility, but the photosensitivity remains relatively low
Solution Approach 1:
The active layer is segmented into multiple oxide semiconductor layers (first, second, and third layers) with different materials and properties. Each layer contributes differently to the overall transistor performance, with the second layer specifically designed to enhance photosensitivity while the first and third layers maintain good operating characteristics.
Solution Approach 2:
The patent uses composite oxide semiconductor structures combining different materials (e.g., In-Ga-Zn-O, In-Al-Zn-O, In-Sn-Zn-O) in a multi-layer configuration. This composite approach allows the transistor to simultaneously achieve high carrier mobility from some layers and enhanced photosensitivity from others, particularly the In-Al-Zn-O layer which has higher photosensitivity.
2Object-affected harmful factors
If a multi-layer oxide semiconductor structure is introduced to improve photosensitivity, then photosensing characteristics are enhanced, but the device structure becomes more complex
Solution Approach 1:
The patent applies local quality by assigning specific functions to specific layers: the first oxide semiconductor layer focuses on providing good operating characteristics, the second layer (In-Al-Zn-O) is specifically designed for enhanced photosensitivity, and the third layer provides additional operational stability. This localized functional assignment enhances photosensitivity without requiring complete restructuring of the entire device.
Solution Approach 2:
The patent modifies material parameters selectively in different layers rather than changing the entire structure. By adjusting composition ratios (e.g., In:Al:Zn:O in the second layer) and thickness parameters of individual layers, the patent achieves enhanced photosensitivity while maintaining manageable structural complexity through controlled parameter variation.
3Manufacturing precision
If high etch selectivity is required for manufacturing the multi-layer structure, then manufacturing precision can be improved, but the manufacturing process becomes more difficult
Solution Approach 1:
The patent introduces a gate insulating layer as an intermediary between the gate electrode and the multi-layer oxide semiconductor structure. This intermediary layer with specific etch selectivity properties enables precise manufacturing of the complex multi-layer structure by providing a reference plane and controlling etch propagation, thereby improving manufacturing precision without excessively complicating the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed transistor design improves photosensing capabilities and manufacturing ease, enabling the creation of electronic devices with enhanced operating and photo-sensing characteristics, such as improved sensitivity and reliability in photo-sensing circuits and flat panel display devices.
Implementation Method 1
The insulating layer may include a material that has an etch selectivity with respect to at least one of the first and second oxide semiconductor layers that is equal to or greater than about '2'.
Implementation Method 2
The second oxide semiconductor layer may include a material that has higher photosensitivity than the first oxide semiconductor layer. The second oxide semiconductor layer may include a material that has a narrower energy band gap than the first oxide semiconductor layer.
Data Source
AI summary
A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.