Oxide Semiconductor Transistor for Remote Control Power Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional switching elements used in electric devices, such as power MOSFETs and IGBTs, experience high standby power consumption due to leakage current, making it difficult to reduce power consumption in standby mode.
Innovation Solution
A remote control system utilizing a transistor with a semiconductor material having a band gap larger than single crystal silicon, preferably an oxide semiconductor, is used to reduce leakage current and power consumption by incorporating a power supply circuit with a switch that can withstand high voltage and has low on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a conventional switching element (power MOSFET, IGBT, or thin film transistor) formed using silicon is used to control power supply, then the electric device can be operated by remote control with on/off control, but standby power consumption increases due to leakage current flowing in the switching element while turned off
Solution Approach 1:
The patent changes the material parameter of the switching element from conventional silicon-based semiconductors to oxide semiconductors (such as In-Ga-Zn-O). This material parameter change fundamentally alters the electrical characteristics, particularly the band gap and off-state current properties, enabling the switch to maintain extremely low leakage current while in the off state, thus resolving the standby power consumption issue while preserving remote control functionality
Solution Approach 2:
The patent employs oxide semiconductor materials (e.g., In-Ga-Zn-O) that combine properties of insulators and semiconductors to create a switching element with dual characteristics: high off-state resistance (insulator-like) for minimal leakage current and sufficient on-state conductivity (semiconductor-like) for power transmission. This composite material approach enables the switch to achieve both low standby power and effective power control
2Use of energy by stationary object
If the switching element is turned off to reduce power consumption, then standby power decreases, but leakage current still flows making it difficult to achieve low power consumption
Solution Approach 1:
The patent changes the material parameter of the switching element from conventional silicon-based semiconductors to oxide semiconductors (such as In-Ga-Zn-O). This material parameter change fundamentally alters the electrical characteristics, particularly the band gap and off-state current properties, enabling the switch to maintain extremely low leakage current while in the off state, thus resolving the standby power consumption issue while preserving remote control functionality
Solution Approach 2:
The patent utilizes the unique property of oxide semiconductors where the semiconductor layer can be easily formed and replaced through oxidation processes. The semiconductor layer is designed to be thin and can be regenerated by oxidation, allowing for a switching element that maintains its low leakage current properties over time without requiring complex maintenance or high-cost materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively minimizes power consumption in non-operation states by reducing off-state current and enabling rapid power resumption, thus reducing overall power usage in electric devices.
Implementation Method 1
a transistor including an oxide semiconductor for a semiconductor layer (active layer) where a channel is formed
Implementation Method 2
can withstand high voltage so that dielectric breakdown does not occur even when voltage between a source and a drain is higher than or equal to 100 V
Implementation Method 3
the transistor including an oxide semiconductor for the semiconductor layer where the channel is formed has extremely low current flowing between the source and the drain when the transistor is turned off
Data Source
AI summary
Provided is a remote control system with which leakage current flowing in a switch can be reduced so that power consumption can be reduced. The remote control system includes a portable information terminal, a server, and an electric device. The on/off of the switch included in the electric device is controlled using information transmitted from the portable information terminal to the server. The switch includes a transistor formed using a semiconductor whose band gap is larger than that of single crystal silicon in a channel formation region.