Oxide Semiconductor Transistor with Segmented Layers for Compact High-Speed Design
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high-speed operation and compact size, particularly in forming transistors with oxide semiconductors, which require efficient resistance control and integration in small areas.
Innovation Solution
A semiconductor device is designed with a transistor structure comprising first to third oxide semiconductor layers, a gate insulating layer, and a gate electrode layer, where the second oxide semiconductor layer is positioned between the first and third layers, and the gate electrode overlaps with the gate insulating layer, enabling high drain current increase rates and high-frequency operation in a small area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a transistor is formed using oxide semiconductor to achieve high-speed operation, then operating speed is improved, but device area increases
Solution Approach 1:
The oxide semiconductor layer is divided into multiple layers (first oxide semiconductor layer, second oxide semiconductor layer, third oxide semiconductor layer) with different compositions and functions. This segmentation allows each layer to be optimized for specific purposes, achieving high-speed operation while maintaining compact device area through functional specialization of each segment.
Solution Approach 2:
Different regions of the oxide semiconductor structure are given different local qualities through varying composition ratios (In-Ga-Zn-O). The first and third layers have different In and Ga ratios compared to the second layer, creating localized regions with optimized electrical characteristics for high-speed operation without increasing overall device area.
2Reliability
If resistance control is improved in oxide semiconductor transistor, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
Resistance control is achieved by changing compositional parameters of the oxide semiconductor layers. By adjusting the atomic ratios of In, Ga, Zn, and O in different layers, precise resistance control is obtained. This parameter-based approach provides reliable resistance control while maintaining relatively simple manufacturing processes compared to structural complexity.
Data Source
AI summary
A semiconductor device which occupies a small area is provided. A semiconductor device includes a resistor. The resistor includes a transistor. The increase rate of a drain current of the transistor with a 0.1 V change in drain voltage is preferably higher than or equal to 1% when the drain voltage is higher than a difference between a gate voltage and a threshold voltage of the transistor. The semiconductor device has a function of generating a voltage based on the resistance of the resistor.