Oxide Semiconductor Transistor with Segmented Resistance Regions
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Solution Overview
Problem
Current semiconductor technologies face challenges in achieving stable electric characteristics and high on-state performance in oxide semiconductor transistors due to high impurity concentrations and oxygen vacancies, leading to increased off-state currents and parasitic resistance.
Innovation Solution
A method involving heat treatment or laser processing to reduce the resistance of oxide semiconductor films, followed by plasma oxidation or oxygen ion implantation to increase the resistance of specific regions, resulting in low impurity concentration and few oxygen vacancies, thereby improving crystallinity and reducing off-state currents while maintaining low parasitic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If heat treatment or laser processing is applied to reduce resistance of oxide semiconductor film, then on-state characteristics are improved, but impurity concentration increases and off-state current increases
Solution Approach 1:
The oxide semiconductor film is divided into multiple regions with different resistance characteristics: a first region (channel region) with high resistance formed by plasma oxidation or oxygen ion implantation, and a second region (source/drain regions) with low resistance formed by heat treatment or laser processing. This segmentation allows each region to have optimized electrical characteristics for its specific function.
Solution Approach 2:
Different regions of the oxide semiconductor film are given different local properties: the channel region has high resistance and low impurity concentration for stable off-state characteristics, while the source and drain regions have low resistance for excellent on-state characteristics. This local differentiation resolves the contradiction between on-state and off-state performance.
2Reliability
If plasma oxidation or oxygen ion implantation is applied to increase resistance of oxide semiconductor film, then impurity concentration is reduced and off-state current is reduced, but on-state characteristics deteriorate
Solution Approach 1:
The oxide semiconductor film is divided into multiple regions with different resistance characteristics: a first region (channel region) with high resistance formed by plasma oxidation or oxygen ion implantation, and a second region (source/drain regions) with low resistance formed by heat treatment or laser processing. This segmentation allows each region to have optimized electrical characteristics for its specific function.
Solution Approach 2:
Different regions of the oxide semiconductor film are given different local properties: the channel region has high resistance and low impurity concentration for stable off-state characteristics, while the source and drain regions have low resistance for excellent on-state characteristics. This local differentiation resolves the contradiction between on-state and off-state performance.
3Reliability
If high-temperature heat treatment is applied to form polycrystalline silicon film, then field-effect mobility is improved, but manufacturing complexity and equipment requirements increase
Solution Approach 1:
The patent changes the material parameter from polycrystalline silicon to oxide semiconductor, and changes the processing temperature parameter from high temperature (required for polycrystalline silicon) to low temperature (suitable for oxide semiconductor). This allows achieving high field-effect mobility without requiring high-temperature heat treatment or laser processing, thereby simplifying the manufacturing process and reducing equipment requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in transistors with stable electric characteristics and excellent on-state performance by reducing impurities and oxygen vacancies, leading to low off-state currents and enhanced reliability.
Implementation Method 1
The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C.
Implementation Method 2
The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C.
Implementation Method 3
A process for increasing the resistance of a region of the oxide semiconductor film may be performed by plasma oxidation or implantation of oxygen ions
Implementation Method 4
A process for increasing the resistance of a region of the oxide semiconductor film may be performed by plasma oxidation or implantation of oxygen ions
Data Source
AI summary
A transistor including an oxide semiconductor film, which has stable electric characteristics is provided. A transistor including an oxide semiconductor film, which has excellent on-state characteristics is also provided. A semiconductor device in which an oxide semiconductor film having low resistance is formed and the resistance of a channel region of the oxide semiconductor film is increased. Note that an oxide semiconductor film is subjected to a process for reducing the resistance to have low resistance. The process for reducing the resistance of the oxide semiconductor film may be a laser process or heat treatment at a temperature higher than or equal to 450° C. and lower than or equal to 740° C., for example. A process for increasing the resistance of the channel region of the oxide semiconductor film having low resistance may be performed by plasma oxidation or implantation of oxygen ions, for example.