Oxide Semiconductor Transistor Oxygen Vacancy Reduction
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Solution Overview
Problem
In transistors using oxide semiconductors, oxygen vacancies near the interface with conductive electrodes lead to reduced contact resistance but also affect the channel formation region, resulting in poor electrical characteristics and challenges in miniaturization for high-speed and low-power operation.
Innovation Solution
A semiconductor device structure with a gate electrode, insulating films, and oxide semiconductor film, where the oxide semiconductor film has a channel formation region and low-resistance regions, and oxygen is added to reduce vacancies, improving electrical characteristics and manufacturing yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the transistor is miniaturized to achieve high-speed operation and low power consumption, then speed and power characteristics are improved, but yield of the manufacturing process decreases
Solution Approach 1:
The conductive film is formed over the entire oxide semiconductor film surface before patterning, ensuring that oxygen diffusion and vacancy formation occur uniformly across all regions. Subsequent selective removal of the conductive film from the channel region prevents oxygen vacancies in the channel formation region, while maintaining low contact resistance at the source/drain interfaces. This preliminary action sequence enables miniaturization with maintained yield.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces oxygen vacancies in the channel formation region, enhancing the transistor's electrical performance, achieving high-speed operation, low power consumption, and high integration with improved yield and reliability.
Implementation Method 1
oxygen is added to reduce vacancies, improving electrical characteristics
Implementation Method 2
oxygen in the oxide semiconductor film is diffused to the conductive material side which is more likely to be bonded to oxygen
Data Source
AI summary
A miniaturized transistor having high electrical characteristics can be provided with high yield. High performance, high reliability, and high productivity of a semiconductor device including the transistor can be achieved. The semiconductor device includes a gate electrode over an insulating surface; a base insulating film which is over the insulating surface and from which the gate electrode protrudes; a gate insulating film over the base insulating film and the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode in contact with an oxide semiconductor film. The thickness of the oxide semiconductor film is smaller than the difference between the thickness of the gate electrode and the thickness of the base insulating film.