Oxide Semiconductor Transistors for Display Devices
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Solution Overview
Problem
Current thin film transistors using amorphous silicon for channel layers in display devices have low field-effect mobility and high off-state current, limiting their performance in terms of voltage withstand and image accuracy, especially in achieving wide viewing angles and preventing image burn-in.
Innovation Solution
The use of oxide semiconductors, particularly intrinsic oxide semiconductor thin film transistors, which reduce off-state current and enhance voltage withstand, enabling more accurate image display and improved viewing angles by minimizing unnecessary current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If thin film transistors using amorphous silicon are used as switching elements, then larger glass substrates can be used, but the field-effect mobility is low and off-state current is high
Solution Approach 1:
The patent changes the material parameter of the semiconductor layer from amorphous silicon to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve low off-state current while maintaining compatibility with large substrate fabrication
2Ease of manufacture
If thin film transistors using amorphous silicon are used, then manufacturing is easier on large substrates, but voltage withstand is insufficient and image accuracy is limited
Solution Approach 1:
The patent changes the semiconductor material from amorphous silicon to oxide semiconductor, which provides higher breakdown voltage and lower off-state current, thereby enabling accurate image display while remaining compatible with large substrate manufacturing processes
3Device complexity
If conventional transistors are used, then device complexity is lower, but image burn-in occurs and viewing angle is limited
Solution Approach 1:
The patent changes the semiconductor material to oxide semiconductor, which inherently provides lower off-state current that prevents charge accumulation and image burn-in, while maintaining a relatively simple transistor structure suitable for display applications
Data Source
AI summary
A semiconductor device or the like with low off-state current is provided. A semiconductor device or the like for displaying images accurately is provided. A display device or the like with a wide viewing angle is provided. A display device or the like in which image burn-in is suppressed is provided. In order to achieve any of the above objects, a circuit is formed using a transistor including an oxide semiconductor (OS), particularly a thin film MOS transistor including an oxide semiconductor. The oxide semiconductor is a substantially intrinsic semiconductor. Thus, the off-state current of the transistor is extremely low.