Oxide Semiconductor Device Oxygen Vacancy Gradient
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Solution Overview
Problem
The manufacturing process of oxide semiconductor devices with high reliability and electrical characteristics is complex, and existing methods do not effectively utilize varying oxygen vacancy concentrations in oxide semiconductor layers to enhance performance.
Innovation Solution
A method involving a substrate with an oxide semiconductor layer having different oxygen vacancy concentrations, achieved by varying oxygen partial pressure during deposition, which includes forming multiple oxide thin-films with different thickness ratios and oxygen vacancy levels, specifically increasing oxygen vacancy concentration near the gate electrode, to create a high-performance oxide semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor layers with modified shapes or different metal elements are used to achieve high reliability and electrical characteristics, then device performance is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent applies local quality by creating a vertically graded oxide semiconductor layer where oxygen vacancy concentration varies through the thickness direction. The layer has higher oxygen vacancy concentration near the substrate and lower concentration near the gate electrode, forming distinct regions with different electrical properties within a single continuous layer. This eliminates the need for multiple separate layers or complex metal element combinations while achieving high reliability and electrical characteristics.
2Manufacturing precision
If multiple oxide thin-films with different metal elements are stacked to improve electrical characteristics, then device performance is enhanced, but the manufacturing process becomes more complicated
Solution Approach 1:
The patent applies parameter changes by controlling oxygen partial pressure during the deposition process to create different oxygen vacancy concentrations in different regions of the oxide semiconductor layer. By varying the oxygen partial pressure gradient during single-layer formation, the method achieves precise control over electrical characteristics without requiring multiple deposition processes or complex metal element stacking, thereby maintaining manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process while achieving high reliability and electrical characteristics, maintaining high mobility and enhancing positive bias stress stability by adjusting oxygen vacancy concentrations within the oxide semiconductor layer.
Implementation Method 1
the oxide semiconductor layer may have different concentrations of oxygen vacancy in the thickness direction
Implementation Method 2
a method for manufacturing an oxide semiconductor device with a vacuum process may include: preparing a substrate in a vacuum chamber; and forming an oxide semiconductor layer on the substrate, wherein the forming an oxide semiconductor layer may include varying oxygen partial pressure in the chamber
Data Source
AI summary
Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.