Oxide Semiconductor Device Oxygen Vacancy Control
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Solution Overview
Problem
Current semiconductor devices with oxide semiconducting channel layers face challenges in optimizing on/off characteristics, particularly in managing oxygen vacancies and hydrogen concentrations to reduce off-current and improve carrier mobility.
Innovation Solution
The semiconductor device incorporates a buried insulating layer with distinct oxygen and hydrogen concentrations in the source/drain and channel layers, utilizing hydrogen implantation to increase oxygen vacancies in the source/drain layer and oxygen implantation to reduce vacancies in the channel layer, thereby controlling carrier concentration and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If hydrogen ions are implanted into the oxide semiconducting layer to increase carrier concentration, then on-current is improved, but off-current increases due to excessive hydrogen concentration
Solution Approach 1:
The patent applies local quality by creating distinct hydrogen concentration zones: the source/drain layer receives hydrogen ion implantation to achieve high carrier concentration for strong on-current, while the channel layer maintains lower hydrogen concentration to minimize off-current. This spatial differentiation of hydrogen concentration optimizes both on and off state performance.
Solution Approach 2:
The oxide semiconducting layer is segmented into functionally distinct regions: a source/drain layer with high hydrogen concentration for carrier injection and a channel layer with controlled hydrogen concentration for current modulation. This segmentation allows independent optimization of on-current and off-current characteristics.
2Power
If oxygen vacancies are increased in the oxide semiconducting layer to improve carrier mobility, then on-current is enhanced, but off-current and leakage increase
Solution Approach 1:
The patent implements local quality by creating oxygen vacancy gradients across different layers: the source/drain layer contains high oxygen vacancy concentration to provide high carrier mobility and strong on-current, while the channel layer maintains lower oxygen vacancy concentration to reduce leakage and improve off-state performance.
Solution Approach 2:
The patent changes the oxygen vacancy parameter differentially across layers through controlled oxygen ion implantation. The source/drain layer undergoes oxygen removal or low-dose implantation to maintain high vacancies, while the channel layer receives oxygen ion implantation to reduce vacancies and suppress leakage current.
3Reliability
If the oxide semiconducting layer is used to achieve low off-current, then data retention is improved, but carrier mobility is reduced compared to non-oxide semiconductors
Solution Approach 1:
The patent uses composite material strategy by combining oxide semiconducting material with controlled oxygen and hydrogen concentration profiles. This composite approach maintains the low off-current and high data retention inherent to oxide semiconductors while introducing oxygen vacancies in the source/drain layer to enhance carrier mobility, achieving a balance between reliability and speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces off-current and leakage, enhances data retention, and improves carrier mobility by strategically managing oxygen vacancies and hydrogen concentrations in the oxide semiconducting layers.
Implementation Method 1
forming a source/drain layer by implanting hydrogen ions into the first oxide semiconducting layer
Implementation Method 2
forming a channel layer by implanting oxygen ions into the second oxide semiconducting layer
Data Source
AI summary
A semiconductor device includes a substrate, a buried insulating layer on the substrate, a channel layer and a source/drain layer on the buried insulating layer, and a gate electrode pattern on the channel layer. The channel layer and the source/drain layer include an oxide semiconducting material. An oxygen vacancy concentration in the source/drain layer is higher than an oxygen vacancy concentration in the channel layer.