Oxide Semiconductor Simulation for Oxygen Vacancy Prediction
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Solution Overview
Problem
The challenge of accurately predicting oxygen vacancy concentration and its impact on the electrical properties of semiconductor devices, particularly in oxide semiconductors like IGZO, is significant due to the difficulty in experimental measurement and simulation of oxygen diffusion, which affects the performance and reliability of miniaturized MOSFETs.
Innovation Solution
An electronic device and method for simulating the process of controlling oxygen vacancies in a semiconductor device model, determining oxygen diffusion concentration, and predicting electrical properties based on current oxygen vacancy concentration, using a processor and simulator to model and analyze the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If experimental measurement methods are used to determine oxygen vacancy concentration, then direct measurement data can be obtained, but the measurement precision is insufficient and the process is complex
Solution Approach 1:
The patent creates a computational model that copies the physical oxygen diffusion process in semiconductor devices. Instead of directly measuring oxygen vacancies experimentally, the system simulates the oxygen diffusion process and infers vacancy concentration from the simulation results, thereby avoiding the measurement difficulties while maintaining accuracy
Solution Approach 2:
The patent replaces the experimental measurement system with a computational simulation system. The complex experimental measurement process is substituted by numerical simulations of oxygen diffusion, using computational algorithms to determine oxygen vacancy concentration without direct physical measurement
2Measurement precision
If inverse operation from electrical properties is used to predict oxygen vacancy concentration, then oxygen vacancy can be inferred, but the prediction accuracy is reduced due to multiple influencing factors
Solution Approach 1:
The patent extracts the oxygen diffusion process from the complex electrical property measurements. By isolating and simulating only the oxygen diffusion mechanism, the system directly predicts oxygen vacancy concentration without the information loss that occurs when inferring from multiple electrical property factors
Solution Approach 2:
The patent performs preliminary simulation of the oxygen diffusion process before electrical measurements are taken. By pre-calculating the oxygen distribution based on diffusion simulations, the system establishes oxygen vacancy concentration before device operation, avoiding the information loss associated with inverse operations on electrical properties
3Reliability
If actual semiconductor devices are produced for testing, then real device performance data can be obtained, but the development time and cost increase
Solution Approach 1:
The patent performs preliminary simulation and prediction of device performance before actual device production. By using the simulated oxygen vacancy concentration to predict electrical properties in advance, the system provides reliability data during the design phase, eliminating the need for iterative production and testing cycles
Solution Approach 2:
The patent creates a virtual copy of the semiconductor device performance through simulation. The computational model replicates the electrical properties based on simulated oxygen vacancy concentrations, providing reliable performance predictions without requiring physical device fabrication and testing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate prediction of electrical properties of semiconductor devices by simulating oxygen vacancy control, allowing for improved design and performance optimization without the need for actual device production, addressing the limitations of miniaturization in MOSFETs.
Implementation Method 1
determining an oxygen diffusion concentration in a channel layer while simulating a process of removing a portion of an oxygen vacancy in the channel layer
Data Source
AI summary
An electronic device configured for simulating the properties of a semiconductor device and an operating method of the electronic device. The operating method of the electronic device includes determining an oxygen diffusion concentration in a channel layer while simulating a process of removing a portion of an oxygen vacancy in the channel layer in a semiconductor device model; determining a current oxygen vacancy concentration in the channel layer from which the portion of the oxygen vacancy has been removed based on a previous oxygen vacancy concentration in the channel layer and the oxygen diffusion concentration in the channel layer; and predicting the electrical properties of the semiconductor device model based on the current oxygen vacancy concentration.