Oxide Sidewall Deposition with Silicon-Rich Soaking
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Solution Overview
Problem
Existing deposition methods, such as PECVD, struggle to produce high-quality silicon-containing materials on vertically extending portions of features, leading to uneven material distribution, increased etch rates, and the formation of seams and voids.
Innovation Solution
A silicon-rich soaking operation is performed in a semiconductor processing chamber, where a silicon-containing precursor is used to generate plasma effluents, depositing a silicon-containing material on both vertically and horizontally extending portions of features. The material is then soaked with a second silicon-containing precursor, increasing the atomic percentage of silicon and improving crosslinking and bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If plasma-enhanced deposition is used to deposit silicon-containing material on vertically extending portions, then material coverage is improved, but film quality deteriorates with increased voids and seams
Solution Approach 1:
A silicon-rich soaking operation is performed before final deposition to pre-condition the vertically extending portions. This preliminary action deposits excess silicon that migrates during subsequent processing to fill voids and improve film quality in hard-to-reach areas.
Solution Approach 2:
The deposition process uses varying silicon concentrations at different stages. The soaking operation uses silicon-rich conditions (higher silicon precursor flow), while the final deposition uses silicon-poor conditions to achieve the desired film properties and uniformity.
2Manufacturing precision
If deposition time is increased to improve film uniformity, then manufacturing time increases, but productivity decreases
Solution Approach 1:
The soaking operation is a relatively short preliminary step (typically 1-10 minutes) that prepares the substrate for faster, more uniform final deposition. This preliminary action reduces the total time needed to achieve uniform film quality compared to traditional single-step deposition.
Solution Approach 2:
The soaking and final deposition operations are performed in continuous sequence without breaking the vacuum or transferring the substrate, maintaining continuous useful action and maximizing productivity while achieving uniform film properties.
3Manufacturing precision
If silicon concentration is increased to improve sidewall film quality, then material distribution becomes uneven, but manufacturing precision worsens
Solution Approach 1:
The soaking operation creates locally silicon-rich conditions on vertically extending portions where needed, while the final deposition creates a more uniform silicon distribution. This local quality approach addresses sidewall film quality without compromising overall material distribution stability.
Solution Approach 2:
The silicon-rich soaking is performed as a preliminary step that deposits excess silicon on sidewalls, which then migrates during the final deposition to create uniform material distribution. This preliminary action ensures both sidewall quality and overall distribution stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality of the silicon-containing material on vertically extending portions, reducing etch rates, minimizing seams and voids, and achieving more consistent film qualities across features.
Implementation Method 1
Plasma-enhanced deposition may produce films having certain characteristics
Implementation Method 2
generating plasma effluents of the silicon-containing precursor in the processing region
Implementation Method 3
soaking the silicon-containing material with a second silicon-containing precursor... increasing an atomic percentage of silicon in the vertically extending portion
Data Source
AI summary
Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.