Semiconductor Device Integrating Oxide and Single Crystal Transistors
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Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization, density, electrical characteristics, high-speed writing and reading, low power consumption, and reliability, particularly when integrating oxide semiconductors with silicon-based semiconductors in complex circuit configurations.
Innovation Solution
A semiconductor device structure is developed with a first transistor using single crystal semiconductor and a second transistor using oxide semiconductor, connected by a conductive film and insulating films, where the second insulating film has a specific carbon concentration and is formed using atmospheric pressure chemical vapor deposition, and a nitride film is applied to the conductive film to enhance electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If oxide semiconductors are used to form transistors in complex circuit configurations, then device density and integration are improved, but electrical characteristics and reliability deteriorate
Solution Approach 1:
A conductive film is introduced as an intermediary component between oxide semiconductor transistors to improve electrical connectivity and signal transmission. The conductive film acts as a mediator that compensates for the inherent electrical limitations of oxide semiconductor materials, enabling better performance in high-density circuit configurations while maintaining reliability.
Solution Approach 2:
The patent employs composite material structures combining oxide semiconductors with conductive films and insulating films having specific carbon concentrations. This composite approach leverages the advantages of each material: oxide semiconductors provide high-density integration capability, while the conductive film enhances electrical properties, creating a synergistic structure that achieves both high density and good electrical characteristics.
2Area of stationary object
If transistors are miniaturized for higher density, then device area is reduced, but manufacturing precision and reliability worsen
Solution Approach 1:
The patent specifies precise parameter ranges for the insulating films, particularly the carbon concentration (greater than or equal to 1.77×10^17 atoms/cm³ and less than or equal to 1.0×10^18 atoms/cm³). By controlling these parameters within defined ranges, the invention achieves reliable fabrication of miniaturized transistors, maintaining manufacturing precision even as device dimensions are reduced for higher density.
3Adaptability or versatility
If oxide semiconductor transistors are integrated with silicon-based transistors, then functional capability is improved, but device complexity increases
Solution Approach 1:
The conductive film serves multiple functions: it provides electrical connectivity between transistors, acts as an interface layer between different semiconductor materials (oxide and silicon-based), and contributes to overall device performance. This multi-functionality reduces the need for additional specialized components, thereby managing complexity while enhancing functional capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables miniaturization, higher density, favorable electrical characteristics, high-speed operations, low power consumption, and improved reliability by effectively connecting single crystal and oxide semiconductor transistors, enhancing the overall performance and stability of the semiconductor device.
Implementation Method 1
The second insulating film is formed by an atmospheric pressure chemical vapor deposition method
Data Source
AI summary
A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.