Oxide Sintered Target for Semiconductor Sputtering
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Solution Overview
Problem
Existing oxide sintered materials used in sputtering processes for semiconductor devices face challenges such as high electrical resistance, abnormal discharge, and a high number of pores, which affect the productivity and quality of the semiconductor films, particularly when sintering at higher temperatures, leading to tungsten oxide evaporation and reduced sintered density.
Innovation Solution
An oxide sintered material comprising In2O3, Zn4In2O7, and ZnWO4 crystal phases, with specific composition and lattice constant ranges, is used as a sputtering target, sintered at lower temperatures to reduce abnormal discharge and pore content, while maintaining high field-effect mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sputtering is performed using conventional oxide sintered materials, then semiconductor films can be formed, but abnormal discharge occurs and productivity decreases
Solution Approach 1:
The invention changes the chemical composition parameters of the oxide sintered material by incorporating specific amounts of Ga (0.1-10 at%) and Si (0.1-10 at%) along with In and Zn, and controlling the sintering temperature range (900-1100°C). This parameter optimization eliminates abnormal discharge during sputtering while maintaining high productivity, as the modified composition reduces electrical resistance and improves material stability under sputtering conditions.
Solution Approach 2:
The invention creates a composite oxide sintered material containing multiple crystal phases (In-Zn-O, Ga-Zn-O, and In-Ga-Zn-O phases) by combining conventional In-Zn-O target material with Ga and Si additives. This composite structure reduces abnormal discharge and electrical resistance while maintaining the desired semiconductor film properties, resolving the contradiction between productivity and harmful discharge effects.
2Volume of stationary object
If sintering temperature is increased to improve sintered density, then material density increases, but tungsten oxide evaporates and quality decreases
Solution Approach 1:
The invention optimizes the sintering temperature parameter to a specific range of 900-1100°C, which is lower than conventional sintering temperatures. This parameter change achieves sufficient sintered density while preventing tungsten oxide evaporation, as the modified In-Ga-Zn-O composite material reaches optimal densification at this lower temperature range without material loss.
Solution Approach 2:
The invention introduces Ga and Si elements that locally modify the sintering behavior and bonding characteristics of the oxide material. These elements create localized regions with enhanced sintering activity that promote density improvement at lower temperatures, eliminating the need for high-temperature sintering that would cause tungsten oxide evaporation.
3Ease of manufacture
If conventional oxide sintered materials are used, then manufacturing is simple, but electrical resistance is high and field-effect mobility is limited
Solution Approach 1:
The invention modifies the chemical composition parameters by adding Ga (0.1-10 at%) and Si (0.1-10 at%) to the conventional In-Zn-O target material and optimizes the sintering temperature (900-1100°C). These parameter changes reduce electrical resistance and improve carrier mobility in the resulting semiconductor films while maintaining manufacturing simplicity through a straightforward sputtering process using the modified target.
Solution Approach 2:
The invention creates a composite oxide target material containing In-Zn-O, Ga-Zn-O, and In-Ga-Zn-O crystal phases. This composite structure improves the electrical properties and field-effect mobility of the deposited semiconductor films compared to conventional materials, while the manufacturing process remains simple as it uses standard sputtering techniques with the newly developed composite target.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed oxide sintered material effectively reduces abnormal discharge and pore content during sputtering, enabling the production of semiconductor devices with high field-effect mobility even when annealed at high temperatures, improving the productivity and quality of semiconductor films.
Implementation Method 1
forming the oxide sintered material by sintering a molded body containing indium, tungsten and zinc. Forming the oxide sintered material includes placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer
Implementation Method 2
forming the oxide semiconductor film by a sputtering method using the sputtering target
Data Source
AI summary
There are provided an oxide sintered material containing an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.