Oxide Semiconductor Source-Drain Oxygen Tuning for Lower Contact Resistance
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Solution Overview
Problem
Conventional semiconductor devices using amorphous silicon or polysilicon face challenges in achieving uniform device characteristics and high carrier mobility, with oxide semiconductors offering advantages but requiring complex processes to reduce contact resistance.
Innovation Solution
A semiconductor device and fabrication method involving heating patterns and light irradiation to reduce oxygen density in source/drain regions of oxide semiconductors, forming metal oxide patterns to separate and reduce contact resistance, and using a gate dielectric layer to improve channel region crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If polysilicon is used as semiconductor material, then carrier mobility is improved, but device uniformity deteriorates due to recrystallization process complexity
Solution Approach 1:
The patent changes the material parameter from conventional polysilicon to oxide semiconductor, which inherently provides high carrier mobility without requiring complex recrystallization processes. This material substitution resolves the contradiction by achieving high speed while maintaining manufacturing simplicity and device uniformity.
2Ease of manufacture
If amorphous silicon is used as semiconductor material, then manufacturing simplicity is improved, but carrier mobility deteriorates
Solution Approach 1:
The patent transitions from amorphous silicon to oxide semiconductor material, which maintains the ease of manufacturing through simple deposition processes while simultaneously achieving high carrier mobility. This resolves the contradiction by finding a material that combines the manufacturing advantages of amorphous silicon with the electrical performance of crystalline materials.
3Reliability
If oxygen density is reduced in oxide semiconductor, then contact resistance is improved, but crystallinity may deteriorate
Solution Approach 1:
The patent applies local quality by creating different oxygen densities in different regions of the oxide semiconductor. The source/drain regions have reduced oxygen density to minimize contact resistance, while the channel region maintains higher oxygen density to preserve crystallinity and electrical performance. This spatial differentiation resolves the contradiction between contact resistance and crystallinity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces contact resistance between source/drain electrodes and oxide semiconductors, shortens processing time, and lowers processing costs by minimizing the need for separate heat treatment processes, while maintaining improved crystallinity and uniformity.
Implementation Method 1
irradiating light toward the oxide semiconductor layer to generate heat from the two heating patterns so that oxygen is released from a portion of the oxide semiconductor layer contacting the two heating patterns into the two heating patterns
Data Source
AI summary
A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern forming a channel region positioned between the two second oxide semiconductor patterns; a gate electrode positioned over or below the first oxide semiconductor pattern; and a gate dielectric layer interposed between the gate electrode and the first oxide semiconductor pattern, wherein an oxygen density of the two second oxide semiconductor patterns is smaller than an oxygen density of the first oxide semiconductor pattern.