Oxide Semiconductor Circuit Substrate for Uniform Low-Leak Displays
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Solution Overview
Problem
Existing display devices using silicon-based semiconductors exhibit significant variations in electrical characteristics, leading to non-uniform display quality and high power consumption due to large off-leak currents and threshold voltage variations.
Innovation Solution
Incorporating a capacitor structure with a first electrode, insulating film, and a second electrode, and a first transistor with an oxide semiconductor film connected to source and drain electrodes, which reduces the area occupied by the transistor and increases channel width, allowing high luminance and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based semiconductors are used in display devices, then the device can be manufactured with established processes, but significant variations in electrical characteristics occur leading to non-uniform display quality and high power consumption
Solution Approach 1:
The patent changes the material parameter from silicon-based semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics. This material substitution enables reduced off-leak currents and threshold voltage variations while maintaining manufacturability through sputtering and other established thin-film deposition techniques, thus resolving the contradiction between ease of manufacture and electrical characteristic uniformity
Solution Approach 2:
The patent employs composite material structures including oxide semiconductor films combined with specific insulating films (such as silicon oxide, silicon nitride) and electrode materials. This composite approach leverages the advantages of each material to achieve both manufacturability and improved electrical uniformity, with the oxide semiconductor providing stable electrical characteristics and the insulating films providing structural support and electrical isolation
2Reliability
If transistor area is reduced to increase channel width, then display uniformity improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the semiconductor material parameters by using oxide semiconductors with specific thickness ranges (50-200 nm) and controlled oxygen content. This material parameter optimization allows for reduced transistor area while maintaining electrical characteristic uniformity, as the oxide semiconductor's inherent stability compensates for the reduced device dimensions, thus improving display uniformity without excessively increasing manufacturing precision requirements
Solution Approach 2:
The patent optimizes the vertical dimension by controlling the thickness of oxide semiconductor films and insulating film layers. By precisely controlling the thickness parameters in the vertical dimension (e.g., oxide semiconductor film thickness of 50-200 nm), the patent achieves improved electrical uniformity and display quality while maintaining manufacturable horizontal dimensions, effectively using dimensional optimization to resolve the contradiction
Data Source
AI summary
Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a first source electrode and a first drain electrode over the oxide semiconductor film. The first source electrode and the first drain electrode are electrically connected to the oxide semiconductor film.