Oxide Superconductor Thin Film with Smooth Buffer Layer

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Solution Overview

Problem

Oxide superconducting thin films with intermediate layers of 20 nm or less tend to form island-like structures, leading to holes that cause a decrease in critical current density (Jc) characteristics due to reactions between the superconducting layer and the substrate.

Innovation Solution

An oxide superconducting thin film with an intermediate layer of 10-20 nm thickness and surface roughness of 0.5 nm or less, composed of CeO2 or MgO with specific valence values, is formed on a substrate with dislocation at the interface, preventing island formation and enhancing Jc characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the thickness of the intermediate layer is reduced to improve Jc characteristics, then the critical current density improves, but the intermediate layer forms island-like structures with holes that cause reactions between the superconducting layer and substrate

Engineering Contradiction:
ImproveJc characteristicsVSAvoidintermediate layer structure
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent applies parameter changes by precisely controlling the thickness of the intermediate layer within the range of 5-20 nm and maintaining surface roughness Ra of 0.5 nm or less. This optimization of dimensional parameters prevents island formation while preserving high Jc characteristics, resolving the contradiction between thinning the layer for better performance and maintaining structural integrity.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality by creating a gradient in layer thickness and composition. The intermediate layer has varying thickness across different regions, being thinner in areas where high Jc is needed while maintaining sufficient coverage to prevent substrate reactions. This local variation in quality allows simultaneous achievement of high critical current density and structural stability.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the intermediate layer is made thinner to reduce lattice mismatch, then the Jc characteristics improve, but the layer becomes unstable and forms holes

Engineering Contradiction:
Improvelattice mismatchVSAvoidintermediate layer stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies composite materials by using a multi-layer structure consisting of the substrate, intermediate layer (CeO2 or MgO), and superconducting layer (YBCO). The intermediate layer acts as a buffer with specific material properties that reduce lattice mismatch between the substrate and superconducting layer while maintaining sufficient thickness and smoothness to prevent hole formation, thus achieving both precision and stability.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies the intermediary principle by introducing CeO2 or MgO as an intermediate buffer layer between the substrate and the YBCO superconducting layer. This intermediary layer mediates the lattice mismatch issue, allowing the thin layer configuration for high Jc while preventing direct contact and reactions between the substrate and superconducting layer, thereby maintaining structural stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If the surface roughness is reduced to prevent island formation, then the Jc characteristics improve, but the manufacturing complexity increases

Engineering Contradiction:
ImproveJc characteristicsVSAvoidsurface control complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by establishing specific quantitative thresholds for surface roughness (Ra ≤ 0.5 nm) and thickness (5-20 nm). These well-defined parameter ranges provide clear manufacturing targets that balance the need for smooth surfaces to prevent island formation with the practical constraints of manufacturing complexity, enabling reproducible high-quality films.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies preliminary action by performing surface preparation and intermediate layer formation with precise roughness control before depositing the superconducting layer. This preliminary smoothing action prevents subsequent island formation during superconducting layer deposition, ensuring high Jc characteristics while managing manufacturing complexity through staged process control.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution results in favorable Jc characteristics and a superconducting fault current limiter with improved performance by preventing substrate reactions and maintaining a smooth interface, thus maintaining high electrical conductivity.

Implementation Method 1

an intermediate layer and a superconducting layer which are provided in this order on the substrate... preventing substrate reactions and maintaining a smooth interface

Methodology Applied
Scientific EffectPhysical barrier:

Implementation Method 2

RE-based superconductors (RE: rare earth element), which exhibit a superconducting phenomenon at liquid nitrogen temperature (77 K) or higher

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS9159898B2Oxide superconductor thin film and superconducting fault current limiter
Publication Date: 2015.10.13 FURUKAWA ELECTRIC CO LTD
  • US9159898B2 patent drawing
  • US9159898B2 patent drawing
  • US9159898B2 patent drawing

AI summary

An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.