3D Memory Contact Region Structure With Oxide Support Columns
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Solution Overview
Problem
Increasing the integration density of two-dimensional non-volatile memory devices has been challenging, leading to the development of three-dimensional memory devices with stacked memory cells, but improving operational reliability and manufacturing efficiency remains a technical hurdle.
Innovation Solution
A semiconductor device with a stack structure of interlayer insulating and gate conductive layers, featuring support structures, barrier layers, and contact plugs formed in a vertical manner, along with a manufacturing method that includes etching and filling processes to create stable and efficient channel and contact plugs, utilizing oxide layers for support structures to prevent oxidation and expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional memory devices with stacked memory cells are formed to increase integration density, then integration density is improved, but manufacturing complexity and operational reliability challenges increase
Solution Approach 1:
The manufacturing process is segmented into distinct stages: forming sacrificial layers, creating holes, depositing barrier layers, filling with conductive materials, and removing sacrificial layers. This segmentation allows complex 3D structures to be built through manageable sequential steps, reducing overall manufacturing complexity while achieving high integration density
Solution Approach 2:
Sacrificial layers are formed in advance before the actual memory structure fabrication. These preliminary structures guide subsequent processing steps and are removed after serving their purpose, enabling precise formation of contact plugs and channel plugs without requiring complex real-time adjustments
2Stability of the object's composition
If support structures are formed using oxide layers in contact regions, then structural stability is improved, but additional manufacturing steps are required
Solution Approach 1:
The support structure formation is merged with the contact plug fabrication process. The same etching holes and barrier layer deposition steps are used for both support structures and contact plugs, reducing the number of separate manufacturing steps while providing structural stability in contact regions
Solution Approach 2:
Oxide layers serve as intermediary support structures during manufacturing. These temporary structures provide mechanical stability during subsequent processing steps and are removed after serving their purpose, enabling complex 3D fabrication without compromising structural integrity
3Manufacturing precision
If barrier layers are formed on sidewalls of support structures and contact plugs, then manufacturing precision is improved, but process time increases
Solution Approach 1:
Barrier layers are deposited on sidewalls of support structures and contact plugs in advance, before the final filling and processing steps. This preliminary barrier layer formation ensures precise dimensional control and material protection throughout subsequent manufacturing steps, reducing the need for rework or adjustments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a stable and efficient semiconductor device with improved manufacturing processes, enhancing integration density and operational reliability while simplifying manufacturing procedures and reducing costs.
Implementation Method 1
utilizing oxide layers for support structures to prevent oxidation and expansion
Data Source
AI summary
There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.