Oxide TFT Annealing Stabilizes Film Formation Variations
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Solution Overview
Problem
The manufacturing process of oxide thin film transistors (TFTs) is prone to variations in performance parameters due to unstable film formation processes, affecting the uniformity and reproducibility of components, particularly in the deposition of insulation dielectric layers.
Innovation Solution
A manufacturing method for oxide TFTs that includes forming an oxide semiconductor active layer, depositing an insulation dielectric layer, and applying an annealing process in an environment of air, dry oxygen, or wet oxygen at temperatures between 250°C to 450°C for 0.5 to 3 hours, using either hot-air or infrared annealing, which helps stabilize the components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If film formation process is used to deposit insulation dielectric layer, then TFT structure is formed, but performance parameters deviate and uniformity is affected
Solution Approach 1:
The patent applies annealing treatment after film formation to change the physical and chemical parameters of the insulation dielectric layer. By controlling annealing temperature (200-450°C), time (0.5-3 hours), and atmosphere (N2, O2, or air), the patent stabilizes the dielectric layer properties, reducing performance parameter deviation and improving TFT uniformity across different manufacturing batches.
Solution Approach 2:
The patent performs annealing treatment as a preliminary stabilization step before final TFT performance evaluation and device assembly. This preliminary action ensures that the insulation dielectric layer reaches its optimal stable state before subsequent processing, preventing performance drift and enhancing manufacturing reproducibility.
2Reliability
If annealing process is applied to stabilize components, then reproducibility is enhanced, but manufacturing time is increased
Solution Approach 1:
The patent optimizes annealing parameters to achieve the minimum necessary treatment for stabilization. By selecting appropriate temperature ranges (200-450°C) and time durations (0.5-3 hours), the patent applies just enough annealing to achieve component stability and reproducibility without excessive processing time, balancing quality improvement with manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the differences in component performance caused by varying film formation processes, enhancing the reproducibility and stability of the TFTs by standardizing the annealing conditions.
Implementation Method 1
applying an annealing process to components formed after the insulation dielectric layer is deposited
Implementation Method 2
a hot-air annealing process or an infrared annealing process is adopted in the annealing process
Implementation Method 3
a hot-air annealing process or an infrared annealing process is adopted in the annealing process
Data Source
AI summary
The manufacturing method of oxide thin film transistors (TFTs) includes: providing a substrate and forming an oxide semiconductor active layer on the substrate; depositing an insulation dielectric layer on the active layer; and applying an annealing process to components formed after the insulation dielectric layer is deposited. After depositing the gate insulation layer on the oxide semiconductor active layer, the annealing process is applied to the formed component, which eliminates the difference of the component performance caused by the insulation dielectric layer formed by different film formation processes such that the reproducibility of the film formation processes may be enhanced.