Oxide TFT Array Substrate Doping Without Ion Implantation
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Solution Overview
Problem
The manufacturing processes of oxide semiconductor thin film transistors in micro-LED and mini-LED display panels are complicated due to ion implantation for dopant implantation, leading to high difficulty and sensitivity to water vapor, which affects device performance.
Innovation Solution
A manufacturing method involving the formation of an oxide material layer with aluminum atoms on the gate electrode, followed by heating to capture oxygen and form an oxide layer, creating conductive source and drain electrode regions, thereby simplifying the process and enhancing device stability against water vapor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation process is used to implant dopants into semiconductors, then the transistor performance is improved, but the manufacturing process complexity increases and difficulty increases
Solution Approach 1:
The patent extracts and removes the ion implantation process from the manufacturing flow, replacing it with a simpler thermal oxidation process. The aluminum oxide layer is formed through thermal oxidation of aluminum atoms deposited on the gate electrode, which naturally creates conductive source and drain regions through oxygen diffusion, eliminating the need for complex ion implantation equipment and processes.
Solution Approach 2:
The patent changes the manufacturing approach from physical ion implantation to chemical thermal oxidation. By controlling temperature parameters (heating to form aluminum oxide) and oxygen exposure, the source and drain regions are formed through parameter-driven chemical reactions rather than complex physical ion bombardment processes.
2Reliability
If ion implantation process is used to implant dopants into semiconductors, then the transistor performance is improved, but the manufacturing difficulty increases
Solution Approach 1:
The patent removes the difficult ion implantation step and replaces it with standard thermal oxidation processes that are easier to manufacture. The aluminum oxide formation through thermal oxidation is a well-established, simpler process that reduces manufacturing difficulty while maintaining device performance.
Solution Approach 2:
The patent replaces the mechanical/physical ion implantation system with a thermal-chemical oxidation system. Instead of using ion beams and complex implantation equipment, the process uses thermal energy to drive oxygen diffusion and form aluminum oxide, which is a more straightforward and easier-to-implement manufacturing approach.
3Reliability
If oxide semiconductor thin film transistors are used, then mobility is higher and cost is lower, but the process is sensitive to water vapor which affects performance
Solution Approach 1:
The patent applies preliminary protective action by forming the aluminum oxide layer before the oxide semiconductor layer is exposed to water vapor. The aluminum oxide serves as a pre-formed protective barrier that prevents water vapor from reaching and degrading the oxide semiconductor, thereby preemptively countering the harmful effect of water vapor sensitivity.
Solution Approach 2:
The aluminum oxide layer acts as a cushioning protective layer formed beforehand to shield the oxide semiconductor from water vapor damage. This prior cushioning protects the sensitive oxide semiconductor material during subsequent processing and operation, preventing performance degradation from water vapor exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method simplifies the manufacturing process and improves device performance by forming a transparent and dense aluminum oxide film that prevents water vapor invasion, reducing the risk of performance degradation.
Implementation Method 1
the oxide material layer captures oxygen in the second region and the third region to form an oxide layer
Implementation Method 2
heating the semiconductor substrate, wherein the oxide material layer captures oxygen
Data Source
AI summary
A manufacturing method of an array substrate, the array substrate, and a display panel are provided. In the manufacturing method of the array substrate, by forming an oxide material layer including aluminum atoms on a gate electrode metal layer, and by heating the oxide material layer to allow the aluminum atoms to capture oxygen in the oxide semiconductor layer, an aluminium oxide is formed, and by making the oxide in the oxide semiconductor layer to lose oxygen to become conductive, a source electrode region and a drain electrode of a thin film transistor are formed.