Oxide TFT Array Substrate Etch Stop Layer Removal
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Solution Overview
Problem
The fabrication process of display panels using oxide TFTs is complex due to the need for additional masks and layers, which affects transmission rates and aperture ratios, and existing etch stop layers increase parasitic capacitance and power consumption.
Innovation Solution
An array substrate with an etch stop layer made of a light-shielding material, featuring a hollow design that eliminates the need for a black matrix on the color filter substrate and includes via holes for connecting electrodes, reducing fabrication steps and improving alignment accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional etch stop layer is used in oxide TFT fabrication, then the fabrication process can be completed, but the parasitic capacitance increases and power consumption increases
Solution Approach 1:
The patent removes the traditional etch stop layer from the oxide TFT structure. By extracting this unnecessary layer, the invention eliminates the parasitic capacitance that would otherwise increase power consumption, while still achieving complete fabrication through alternative process design
Solution Approach 2:
The invention changes the structural parameters of the TFT by eliminating the etch stop layer thickness parameter entirely. This parameter change reduces the overall device capacitance and subsequently lowers power consumption while maintaining functional integrity
2Manufacturing precision
If additional masks and layers are added to achieve high-precision driving, then the electron mobility of TFT can be improved, but the fabrication process complexity increases
Solution Approach 1:
The patent designs the oxide semiconductor layer to serve multiple functions: it acts as both the active channel layer and the etch stop function simultaneously. This multi-functionality eliminates the need for separate etch stop layers and additional masks, reducing fabrication complexity while maintaining high manufacturing precision for electron mobility control
3Manufacturing precision
If the etch stop layer is made opaque to serve as black matrix, then the alignment accuracy can be improved, but the transmission rate decreases
Solution Approach 1:
The patent extracts and removes the etch stop layer entirely, eliminating the need to compromise transmission rate for alignment purposes. Alignment accuracy is achieved through alternative methods such as precise photolithography patterns and alignment marks on remaining layers, allowing the display to maintain high transmission rate without opaque etch stop layers
Solution Approach 2:
Instead of making the entire etch stop layer opaque, the invention uses selective patterning with partial opacity only where absolutely necessary for alignment, or relies on excessive precision in photolithography to achieve alignment without any opaque layers, thus minimizing impact on transmission rate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, enhances transmission rates, reduces parasitic capacitance, and minimizes power consumption while improving the aperture ratio and response speed of the display panel.
Implementation Method 1
the etch stop layer is made of a light-shielding material
Data Source
AI summary
Embodiments of the present invention disclose an array substrate comprising: a base substrate, a gate line and a gate electrode located on the base substrate; an insulating layer covering the gate line and the gate electrode; an active layer on the insulating layer, corresponding to the gate electrode; an etch stop layer above the active layer, the etch stop layer including a first via hole and a second via hole located above the active layer; a data line, a source electrode and a drain electrode and a pixel electrode on the etch stop layer, wherein the source electrode is connected with the active layer through the first via hole, wherein the etch stop layer is made of a light-shielding material.