Oxide TFT Channel Structure for High-Resolution Display Pixels
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Solution Overview
Problem
As display devices increase in resolution and reduce dead space, the electrical characteristics of transistors deteriorate due to their reduced area, necessitating improved transistor design to maintain performance.
Innovation Solution
The display device incorporates a substrate with a barrier layer and active patterns featuring channel regions that protrude along the trench or pillar shape, along with a source and drain region, a gate electrode, and a conductive pattern, utilizing materials like silicon nitride and oxide semiconductors to enhance transistor length and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the area of transistors is reduced to increase resolution and reduce dead space, then the resolution and display area are improved, but the electrical characteristics of transistors deteriorate
Solution Approach 1:
The channel region is extended in the vertical dimension by forming it to protrude downward along the profile of the trench or upward along the profile of the pillar pattern. This three-dimensional channel structure increases the effective channel length without increasing the planar area, thereby improving electrical characteristics while maintaining high resolution and reduced dead space.
Solution Approach 2:
The channel region is nested within the trench or pillar pattern structure formed by the barrier layer. The active pattern is disposed on the barrier layer and the channel region is formed to protrude along the profile of the trench or pillar pattern, creating a nested configuration that maximizes the use of available space while extending the channel length.
2Reliability
If the channel region length is increased to improve electrical characteristics, then the transistor performance is improved, but the area occupied by the transistor increases
Solution Approach 1:
Instead of extending the channel region in the horizontal plane which would increase transistor area, the channel region is extended in the vertical dimension by forming it to protrude along the profile of the trench or pillar pattern. This allows increased channel length for improved electrical characteristics without increasing the planar area occupied by the transistor.
Solution Approach 2:
The channel region is formed with different geometries in different locations: it protrudes downward along the profile of the trench or upward along the profile of the pillar pattern. This localized geometric variation optimizes the channel length in the vertical direction while maintaining compact horizontal dimensions, thereby improving electrical characteristics without increasing overall transistor area.
Data Source
AI summary
A display device may include a substrate, a barrier layer disposed on the substrate and having a trench, an active pattern disposed on the barrier layer, formed of an oxide semiconductor, and including a channel region protruding downward along a profile of the trench, and a source region and a drain region disposed at each end of the channel region, respectively, a gate electrode disposed on the active pattern and overlapping the channel region, a source electrode disposed on the gate electrode and electrically connected to the source region, and a drain electrode disposed on the gate electrode and electrically connected to the drain region.