Oxide TFT Contact Hole Layout for Hydrogen-Stable Display Panels
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Solution Overview
Problem
The manufacturing process of light emitting display devices is complex due to the need for multiple masks to form source and drain electrodes, which increases costs and complicates the process, while also posing challenges in maintaining the performance of transistors with oxide semiconductors.
Innovation Solution
A display device and manufacturing method where the first connection electrode and second connection electrode are disposed in the same layer as the first electrode, omitting the source and drain electrodes, and using a silicon nitride intermediate film with controlled opening sizes and shapes to stabilize the transistor performance, including plasma treatment to manage hydrogen content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If source electrode and drain electrode are disposed in a same layer as data line, then transistor performance can be maintained, but manufacturing complexity increases due to multiple masks required
Solution Approach 1:
The source electrode and drain electrode are merged into a single first electrode layer that is disposed in the same layer as the data line. This integration reduces the number of separate electrode structures and simplifies the manufacturing process by eliminating the need for multiple masks to form separate source and drain electrodes, while still maintaining proper transistor functionality through the unified electrode design.
2Device complexity
If number of masks is reduced to simplify manufacturing process, then manufacturing complexity decreases, but transistor performance stability may be compromised
Solution Approach 1:
The cross-sectional area of the opening in the intermediate film is precisely controlled within the range of 49 μm² to 81 μm². This parameter optimization allows sufficient plasma treatment to remove hydrogen from the oxide semiconductor layer while maintaining the simplified manufacturing process with reduced masks. The specific area range ensures that the opening is large enough for effective hydrogen removal but small enough to maintain transistor performance stability.
Solution Approach 2:
Plasma treatment is performed on the oxide semiconductor layer before final electrode formation to proactively remove hydrogen that may have been introduced during manufacturing. This preliminary action prevents potential performance degradation before it occurs, ensuring transistor stability is maintained even with the simplified manufacturing process that uses fewer masks.
3Object-generated harmful factors
If opening area in intermediate film is increased to allow plasma treatment, then hydrogen removal improves, but excess hydrogen may still introduce into semiconductor layer
Solution Approach 1:
The cross-sectional area of the opening is precisely controlled within the optimal range of 49 μm² to 81 μm². This specific parameter range allows sufficient plasma treatment to effectively remove hydrogen from the oxide semiconductor layer while preventing excess hydrogen introduction. The controlled area ensures that the opening is large enough for adequate plasma penetration and hydrogen removal but small enough to maintain manufacturing precision and prevent over-exposure to hydrogen-containing plasma.
Data Source
AI summary
A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.