Oxide TFT Display Module Layout for Low-Leakage High Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing thin film transistors in display devices suffer from mobility and leakage current issues, particularly when using amorphous silicon, which affects display performance and efficiency.
Innovation Solution
The display device incorporates a substrate with specific pad configurations and transistors using oxide semiconductors, including III-V Group materials and transparent electrodes, to enhance mobility and reduce leakage current, along with a manufacturing method that forms conductive layers and transistors at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If amorphous silicon is used for thin film transistors, then the transistor can be manufactured with general-purpose materials and processes, but the mobility is low and leakage current is high
Solution Approach 1:
The patent changes the material parameter of the semiconductor layer from amorphous silicon to oxide semiconductor, which fundamentally alters the electrical properties (mobility and leakage current) while maintaining compatibility with existing thin film transistor manufacturing processes
Solution Approach 2:
The patent employs composite material structures including oxide semiconductor layers combined with specific gate insulating layers and electrode materials to achieve both high performance and manufacturability
2Manufacturing precision
If high-resolution display is achieved, then the display quality is improved, but the coupling current and leakage current increase
Solution Approach 1:
The patent changes the semiconductor material parameters to achieve extremely low off-state current (leakage current) levels, enabling high-resolution displays where even minimal leakage would accumulate and degrade image quality
Solution Approach 2:
The patent uses oxide semiconductor materials that can be formed at low temperatures, enabling the use of flexible substrates and reducing the need for expensive, thick glass substrates that would be required to prevent leakage in conventional displays
3Illumination intensity
If transparent electrodes and low-temperature processing are used, then the transmittance is improved and resin substrates can be used, but the heat resistance is reduced
Solution Approach 1:
The patent changes the processing temperature parameter to below 200°C, enabling the use of transparent electrodes and resin substrates that would degrade at higher temperatures, while still achieving functional semiconductor layers
Solution Approach 2:
The patent employs composite material systems including transparent conducting oxides (ITO, IZO) combined with oxide semiconductors and low-temperature gate insulating materials to achieve both high transmittance and adequate thermal stability
Data Source
AI summary
A display device according to an embodiment includes a substrate including a plurality of first pads for transmitting a gate signal, a plurality of second pad for transmitting a data signal, a plurality of third pads for transmitting a first power voltage, and a plurality of fourth pads for transmitting a second power voltage different from the first power voltage, into a display area; and a plurality of display modules each including first to fourth connection electrodes attached to the first to the fourth pads, respectively, a first transistor electrically connected to the third connection electrode and having an activation layer including a oxide semiconductor, a second transistor electrically connected to the first connection electrode and the second connection electrode, and a light emitting diode electrically connected to the first transistor and the fourth connection electrode.