Oxide Semiconductor Thin Film Transistors with Doping Variation
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Solution Overview
Problem
The existing manufacturing processes for organic light emitting display devices require multiple semiconductor layers for different transistors, leading to increased costs and complexity due to the need for distinct device performance characteristics between driving and switching transistors.
Innovation Solution
A display panel design that unifies transistors using an oxide semiconductor material, with varying doses and gate electrode configurations for switching and driving transistors, allowing for the same type of semiconductor to be used for both while maintaining different device performance requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different semiconductor layers are used for driving transistor and switching transistor to secure different device performance, then device performance requirements are met, but the number of manufacturing processes increases resulting in higher manufacturing costs and process times
Solution Approach 1:
The patent applies parameter changes by adjusting the doping concentration in the oxide semiconductor layer to differentiate between driving transistor and switching transistor characteristics. By controlling the doping concentration parameter, the patent achieves different device performances (threshold voltage, on-current, off-current, charge mobility) while using the same oxide semiconductor material, thus avoiding the need for multiple semiconductor layers and complex manufacturing processes.
2Reliability
If different semiconductor layers are used for driving transistor and switching transistor, then different device performance is achieved, but manufacturing cost increases
Solution Approach 1:
The patent reduces manufacturing cost by changing the doping concentration parameter within a single oxide semiconductor layer rather than requiring multiple different semiconductor layers. This approach simplifies material procurement, reduces fabrication complexity, and lowers overall manufacturing costs while still achieving the required different device performances for driving and switching transistors.
3Reliability
If different semiconductor layers are used for driving transistor and switching transistor, then different device performance is achieved, but process time increases
Solution Approach 1:
The patent reduces process time by implementing parameter changes (doping concentration) in a single oxide semiconductor layer formation process rather than requiring sequential formation of multiple different semiconductor layers. This consolidation of processes significantly reduces the total manufacturing time while maintaining the ability to achieve different device performances through controlled doping variations.
Data Source
AI summary
The present disclosure relates to an organic light emitting display device, and more particularly, to a thin film transistor using an oxide semiconductor material for a plurality of thin film transistors constituting a circuit portion of a sub-pixel and a display panel including the thin film transistor. The plurality of thin film transistors includes a plurality of switching transistors and a driving transistor. Each of the plurality of switching transistors has a first dose, and the driving transistor has a second dose different from the first dose.