Oxide TFT Epitaxial Insulating Layer for Low-Temperature Single Crystal Growth
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Solution Overview
Problem
Existing oxide semiconductor thin film transistors face challenges in achieving a single crystal structure, particularly in large areas, due to the need for high-temperature processes, which limits their field effect mobility.
Innovation Solution
A method is developed to form an oxide semiconductor layer with a single crystal structure by controlling the structure of an insulating layer below the oxide semiconductor layer, using an Epi-oxide layer as a substrate for epitaxial growth, allowing low-temperature fabrication on large areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If high-temperature heat treatment (above 500°C) or epitaxial growth is applied to create single-crystalline oxide semiconductor, then single crystal structure is achieved, but manufacturing process complexity and difficulty increase significantly
Solution Approach 1:
The patent uses an insulating layer as an intermediary substrate to enable low-temperature formation of single-crystalline oxide semiconductor. The insulating layer provides a controlled interface that facilitates epitaxial growth at lower temperatures (below 500°C) compared to direct growth on conventional substrates, thus resolving the contradiction between achieving single crystal structure and maintaining ease of manufacture
Solution Approach 2:
The patent changes the temperature parameter from high-temperature (above 500°C) processing to low-temperature (below 500°C) processing by introducing a specific insulating layer structure. This parameter change enables single-crystalline oxide semiconductor formation without requiring high-temperature heat treatment, thereby simplifying the manufacturing process while maintaining the desired crystal structure
2Stability of the object's composition
If high-temperature heat treatment is applied to form single-crystalline oxide semiconductor, then single crystal structure is achieved, but manufacturing cost increases
Solution Approach 1:
The patent changes the temperature parameter from high-temperature (above 500°C) to low-temperature (below 500°C) processing by introducing a specific insulating layer structure. This parameter change enables single-crystalline oxide semiconductor formation without requiring high-temperature heat treatment, thereby reducing energy consumption and manufacturing cost while maintaining the desired crystal structure
3Ease of manufacture
If oxide semiconductor thin film transistor is manufactured with conventional processes, then manufacturing is easier, but field effect mobility remains low
Solution Approach 1:
The insulating layer acts as a mediator that enables low-temperature epitaxial growth of single-crystalline oxide semiconductor, achieving high field effect mobility without requiring complex high-temperature processes. This resolves the contradiction by providing an intermediate solution that maintains manufacturing simplicity while dramatically improving device performance
Solution Approach 2:
The patent employs a composite structure consisting of an insulating layer combined with oxide semiconductor material. This composite approach allows the insulating layer to provide the necessary substrate properties for high-quality crystal growth, while the oxide semiconductor layer provides the desired electrical properties, achieving both ease of manufacture and high field effect mobility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of an oxide semiconductor layer with improved field effect mobility, enhancing the performance of thin film transistors.
Implementation Method 1
A method is developed to form an oxide semiconductor layer with a single crystal structure by controlling the structure of an insulating layer below the oxide semiconductor layer, using an Epi-oxide layer as a substrate for epitaxial growth
Data Source
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AI summary
Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).