Oxide TFT Layer Structure for Etch-Selective OLED Displays
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Solution Overview
Problem
The existing semiconductor elements in OLED display devices face limitations due to the complexity of the manufacturing process and the need for etch stop layers, which restrict the design freedom and material selection for transistors.
Innovation Solution
A display device configuration using transistors with a gate electrode, gate insulating film, and two metal oxide layers with different crystallinity, where the first metal oxide layer is crystalline and the second is non-crystalline, allowing for improved etching selectivity and simplified manufacturing by using identical materials and etchants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an etch stop layer is provided to prevent etching of the lower layer, then etching selectivity is improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent applies local quality by creating distinct crystalline and non-crystalline regions within the same metal oxide layer. The crystalline region provides etching resistance where needed, while the non-crystalline region allows etching in other areas, eliminating the need for a separate etch stop layer.
Solution Approach 2:
The patent changes the physical parameter of crystallinity within the metal oxide layer to achieve different etching characteristics. By controlling the crystalline state in specific regions, the patent achieves etching selectivity without adding structural complexity.
2Manufacturing precision
If an etch stop layer is provided at a specific position, then etching selectivity is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent creates local quality differences within a single metal oxide layer by forming crystalline and non-crystalline regions. This approach achieves etching selectivity without requiring additional manufacturing steps to deposit separate etch stop layers.
Solution Approach 2:
The patent merges the functions of the metal oxide layer and the etch stop layer into a single structure. The metal oxide layer simultaneously serves as a functional layer and provides etching protection through its crystalline regions, simplifying the manufacturing process.
3Manufacturing precision
If different materials are used for etching selectivity, then etching performance is improved, but material selection freedom is reduced
Solution Approach 1:
The patent changes the physical state (crystalline vs. non-crystalline) of the same metal oxide material to achieve etching selectivity. This approach maintains material selection freedom while achieving the desired etching performance.
Solution Approach 2:
The patent creates a composite structure within the metal oxide layer, combining crystalline and non-crystalline phases of the same material. This composite approach provides etching selectivity without requiring multiple different materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the design freedom and manufacturing process efficiency by utilizing the difference in etching resistance between metal oxides with varying crystallinity, mitigating material and process limitations, and improving transistor performance.
Implementation Method 1
a first metal oxide layer having crystallinity and a second metal oxide layer having non-crystallinity
Data Source
AI summary
A display device includes a gate electrode, a gate insulating film, a first metal oxide layer having crystallinity, and a second metal oxide layer having non-crystallinity. The first metal oxide layer and the second metal oxide layer are sequentially laminated on a substrate. The first metal oxide layer and the second metal oxide layer are in contact with each other in all regions where the first metal oxide layer and the second metal oxide layer overlap each other. The first metal oxide layer at least partially has a first semiconductor region serving as a semiconductor. One of the first metal oxide layer and the second metal oxide layer at least partially has a conductor region made electrically conductive.