Oxide TFT Gate Driving Circuit for Stable Touch Suspension
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Solution Overview
Problem
The leakage current of low-temperature polycrystalline silicon thin film transistors in gate driving circuits causes unstable voltage levels during the pull-up and touch suspension stages, leading to a split-screen phenomenon in display panels.
Innovation Solution
A gate driving circuit with oxide thin film transistors in the pull-up and pull-down modules reduces leakage current, maintaining stable voltage levels by utilizing oxide thin film transistors in the pull-up control and pull-down modules, connected to a first node, and incorporating additional thin film transistors and capacitors for voltage stabilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If low-temperature polycrystalline silicon thin film transistors are used in the gate driving circuit, then the mobility of charge carriers is improved, but the leakage current increases causing unstable voltage levels
Solution Approach 1:
The patent changes the material parameter of the thin film transistor from low-temperature polycrystalline silicon to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve low leakage current while maintaining adequate mobility for gate driving circuit operation
Solution Approach 2:
The patent employs a composite transistor structure combining oxide semiconductor channel layer with other functional layers (gate electrode, source/drain electrodes, insulating layers) to create a device that achieves both low leakage current and sufficient charge carrier mobility for driving the gate lines
2Duration of action of moving object
If the pull-up node maintains high voltage level for a long time during touch suspension stage, then the touch detection function is enabled, but the leakage current causes voltage level degradation
Solution Approach 1:
The patent changes the transistor material parameter to oxide semiconductor, which has inherently low off-state leakage current, enabling the pull-up node to maintain high voltage level throughout the extended touch suspension stage without significant voltage degradation
Data Source
AI summary
A gate driving circuit and a display panel are disclosed. A pull-up control module and a pull-down module of each stage gate driving unit are connected to a first node. A thin film transistor in the pull-up control module and/or pull-down module that is connected to the first node is an oxide thin film transistor, such that a leakage current of the first node is reduced due to the advantage of the small off-state leakage current of the oxide thin film transistor. Therefore, the voltage level of the first node can remain stable during a pull-up stage and a touch suspension stage.