Oxide TFT Isolation Layer for Defect and Mobility Control
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Solution Overview
Problem
Metal oxide TFT devices in high-end display devices, such as OLED and Mini-LED, face issues like poor characteristics and electron mobility degradation due to higher defect energy level density in the insulating dielectric layer covering the metal oxide semiconductor layer.
Innovation Solution
A method for preparing a semiconductor device involves forming a metal oxide semiconductor layer on a substrate, followed by a second insulating dielectric layer and a metal oxide isolation layer. The metal oxide isolation layer has a higher concentration of elemental oxygen than the second insulating dielectric layer, which in turn has a higher concentration than the metal oxide semiconductor layer, to reduce defect energy level density and enhance stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a second insulating dielectric layer is formed on the metal oxide semiconductor layer, then device structure is completed, but defect energy level density increases causing poor characteristics
Solution Approach 1:
An oxygen-rich metal oxide insulating layer is introduced as an intermediary between the metal oxide semiconductor layer and the second insulating dielectric layer. This intermediate layer acts as a buffer that prevents harmful interactions and reduces defect energy level density, thereby improving device characteristics while maintaining structural completeness.
Solution Approach 2:
The patent changes the oxygen concentration parameter by forming a metal oxide insulating layer with specifically higher oxygen content than the second insulating dielectric layer. This parameter change (increasing oxygen concentration in the intermediate layer) reduces defect energy level density and improves semiconductor layer characteristics.
2Ease of manufacture
If conventional insulating dielectric layer is used, then manufacturing process is simplified, but electron mobility degrades
Solution Approach 1:
The patent applies local quality by creating a metal oxide insulating layer with specifically higher oxygen concentration at the interface region with the semiconductor layer, while the bulk of the second insulating dielectric layer maintains its conventional composition. This localized oxygen enrichment improves electron mobility at the critical interface without complicating the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the stability and electron mobility of semiconductor devices, reducing display defects caused by poor characteristics and enabling mass production of high-end OLED and Mini LED products with enhanced performance.
Implementation Method 1
a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer
Data Source
AI summary
A method for preparing a semiconductor device includes: forming a metal oxide semiconductor layer on a substrate; forming a second insulating dielectric layer on a side of the metal oxide semiconductor layer away from the substrate; wherein further including: forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate; wherein the metal oxide isolation layer is in contact with a surface of the second insulating dielectric layer away from the substrate, a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer. An array substrate and a display panel are also provided.