Oxide TFT Display Circuit for Fine-Pitch Inorganic LED Driving
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Solution Overview
Problem
Existing display devices face challenges in effectively driving light-emitting elements with fine sizes, particularly inorganic LEDs, which require efficient and durable circuit elements.
Innovation Solution
Incorporation of an oxide thin film transistor as a circuit element layer to drive light-emitting elements with micrometer or nanometer unit sizes, utilizing oxide semiconductors for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional inorganic LED elements are used, then durability in high temperature environment and blue light efficiency are improved, but manufacturing complexity increases due to the need for specialized transfer methods
Solution Approach 1:
The patent introduces a dielectric layer as an intermediary medium between the substrate and the inorganic LED element. This dielectric layer facilitates the transfer and positioning of the LED element using dielectrophoresis, simplifying the manufacturing process while maintaining the durability and efficiency benefits of inorganic LEDs
2Manufacturing precision
If light-emitting elements with micrometer or nanometer unit sizes are implemented, then display resolution and efficiency are improved, but the complexity of circuit element layers increases
Solution Approach 1:
The patent changes the material parameter of the circuit element layer to oxide thin film, which has superior electrical properties and compatibility with fine-pitch fabrication processes. This material substitution enables precise control of light-emitting elements at micrometer and nanometer scales while managing the complexity of the circuit layer through optimized oxide semiconductor characteristics
Data Source
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AI summary
A display device is provided. The display device comprises: a light-emitting element; a first transistor for transmitting a driving current to the light-emitting element; and a second transistor for transmitting a data signal to the first transistor, wherein the first transistor includes a first active layer, the second transistor includes a second active layer including an oxide semiconductor, and the light-emitting element includes a first conductivity-type semiconductor having a first polarity, a second conductivity-type semiconductor having a second polarity different from the first polarity, and an active material layer arranged between the first conductivity-type semiconductor and the second conductivity-type semiconductor.