Oxygen-Conveying Gate Insulator for Oxide TFT Stability
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Solution Overview
Problem
The threshold voltage of oxide thin film transistors on array substrates tends to drift, leading to poor stability and reliability, which affects the display performance.
Innovation Solution
Incorporating a gate insulating layer that conveys oxygen to the active metal oxide semiconductor layer to reduce interface state density and movable impurity concentration, using materials like SiOx, Al2O3, and HfO2, and forming the active layer with low oxygen content to create an oxygen-enriched interface, thereby stabilizing the threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate insulating layer conveys oxygen to active layer, then interface state density is reduced and threshold voltage stability is improved, but manufacturing process complexity increases
Solution Approach 1:
The gate insulating layer serves dual functions: as the gate dielectric and as an oxygen source for the active layer. The oxygen diffusion from the gate insulating layer to the active layer occurs automatically during standard annealing processes, eliminating the need for separate oxygen treatment steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces threshold voltage drift, enhancing the stability and reliability of the array substrate and improving display performance by reducing interface state density and replenishing oxygen vacancies.
Implementation Method 1
the gate insulating layer conveys oxygen to the active layer so as to reduce an interface state density and a movable impurity concentration of a contact interface between the active layer and the gate insulating layer
Data Source
AI summary
Embodiments of the present invention disclose a thin film transistor and an array substrate, manufacturing methods thereof, and a display device, which relate to the field of display technology, and can improve drifting of a threshold voltage of a thin film transistor and enhance the stability and reliability of an array substrate. The thin film transistor comprises an active layer and a gate insulating layer, wherein the material of the active layer is a metal oxide semiconductor, and during forming the thin film transistor, the gate insulating layer conveys oxygen to the active layer so as to reduce an interface state density and a movable impurity concentration of a contact interface between the active layer and the gate insulating layer.