Oxide TFT Gate Insulator Oxygen Release for Display Characteristic Control
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Solution Overview
Problem
Existing display devices face challenges in achieving optimal transistor characteristics for high-resolution displays, particularly in controlling element characteristics such as mobility and threshold voltage without additional oxygen supply layers.
Innovation Solution
A display device incorporating a substrate with a first transistor featuring an oxide semiconductor active layer with indium content between 40 at% to 54 at%, and a gate insulating layer with specific oxygen or nitrogen monoxide emission ranges, allowing for controlled electrical characteristics without additional oxygen supply layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional oxygen supply layers are added to control transistor characteristics, then element characteristics such as mobility and threshold voltage can be optimized, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The gate insulating layer itself serves as the oxygen supply source through controlled heat treatment, eliminating the need for separate oxygen supply layers. The gate insulating layer releases oxygen at specific temperatures to dope the oxide semiconductor active layer, making the system self-sufficient and reducing structural complexity while maintaining precise control over transistor characteristics
Solution Approach 2:
The invention controls the oxygen emission characteristics by adjusting the composition and deposition conditions of the gate insulating layer, specifically controlling the release of nitrogen monoxide and oxygen at temperatures between 50°C and 550°C. By changing the physical and chemical parameters of the gate insulating layer, precise control over oxygen supply to the active layer is achieved without adding structural complexity
2Manufacturing precision
If additional oxygen supply layers are added to control transistor characteristics, then element characteristics such as mobility and threshold voltage can be optimized, but manufacturing process complexity increases
Solution Approach 1:
The invention combines the oxygen supply function with the gate insulating layer, which already serves as an electrical insulator. By merging these two functions into a single layer, the manufacturing process is simplified as fewer separate layers need to be deposited and patterned, while still achieving precise control over transistor characteristics through controlled oxygen release
Solution Approach 2:
The gate insulating layer performs dual functions: providing electrical insulation and serving as an oxygen source through heat treatment. This self-service approach eliminates the need for separate oxygen supply layers and their associated manufacturing steps, simplifying the overall manufacturing process while maintaining control over transistor characteristics
3Reliability
If indium content in oxide semiconductor is increased to improve mobility, then electron mobility increases, but manufacturing precision control becomes more difficult
Solution Approach 1:
The invention optimizes the indium content within a specific range (40-54 at%) and controls the oxygen emission characteristics of the gate insulating layer by adjusting its composition and deposition conditions. By changing these parameters in a coordinated manner, high electron mobility is achieved while maintaining precise control over threshold voltage and other element characteristics through controlled oxygen doping during heat treatment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of transistors with suitable element characteristics for display panels, simplifying the device structure and manufacturing process while enhancing manufacturing efficiency and securing appropriate characteristics for high-resolution displays.
Implementation Method 1
the gate insulating layer has an emission amount of oxygen (O2) in a range of about 2.48E+19 Molec./cm3 to about 2.76E+19 Molec./cm3, or an emission amount of nitrogen monoxide (NO) in a range of about 1.04E+20 Molec./cm3 to about 1.15E+20 Molec./cm3 under heat treatment conditions performed at a temperature range of about 50° C. to about 550° C.
Data Source
AI summary
A display device includes a substrate, a first transistor including a first active layer disposed on the substrate and a first gate electrode disposed on the first active layer, and a first gate insulating layer disposed between the first active layer and the first gate electrode. The first active layer includes an oxide semiconductor containing indium (In) at a content range of about 40 at % to about 54 at %, and the first gate insulating layer has an emission amount range of oxygen (O2) of about 2.48E+19 Molec./cm3 to about 2.76E+19 Molec./cm3, or an emission amount range of nitrogen monoxide (NO) of about 1.04E+20 Molec./cm3 to about 1.15E+20 Molec./cm3 under heat treatment conditions performed at a temperature range of about 50° C. to about 550° C.