Oxide Thin-Film Transistor Pixel Circuit With Integrated Capacitor
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Solution Overview
Problem
Current semiconductor devices with thin film transistors face challenges in achieving high mobility and reliable performance, particularly in display devices where crystalline semiconductor transistors may have limited channel area and oxide semiconductor transistors struggle with current leakage, affecting the overall efficiency and reliability of pixel driving circuits.
Innovation Solution
The semiconductor device incorporates a base substrate with a first transistor using a crystalline semiconductor and a second transistor using an oxide semiconductor, both with specific insulating layers and electrode configurations to form capacitors, enhancing channel area and reducing current leakage, thereby improving mobility and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If crystalline semiconductor transistors are used in display devices, then mobility can be improved, but the channel area is limited
Solution Approach 1:
The invention divides the transistor structure into multiple segments: a first transistor with crystalline semiconductor for high mobility requirements, and a second transistor with oxide semiconductor for other functions. This segmentation allows each transistor type to be optimized for its specific role, resolving the contradiction between mobility and channel area limitations
Solution Approach 2:
The invention applies different semiconductor materials to different locations within the pixel driving circuit. Crystalline semiconductor is used specifically where high mobility is critical, while oxide semiconductor is used in other positions. This local quality approach ensures high mobility where needed without requiring increased channel area throughout the entire circuit
2Ease of manufacture
If oxide semiconductor transistors are used, then manufacturing can be simplified, but current leakage occurs
Solution Approach 1:
The invention merges oxide semiconductor and crystalline semiconductor transistors within the same pixel driving circuit. The oxide semiconductor provides manufacturing simplicity, while the crystalline semiconductor compensates for current leakage issues in critical positions, achieving both ease of manufacture and reliability
Solution Approach 2:
The capacitor structure with multiple insulating layers acts as an intermediary element that works alongside the oxide semiconductor transistor. The specific insulating layer configuration helps stabilize the electrical characteristics and reduce current leakage, allowing oxide semiconductor to be used effectively despite its inherent leakage tendencies
3Adaptability or versatility
If multiple transistors are integrated in pixel driving circuits, then functionality is improved, but device complexity increases
Solution Approach 1:
The invention designs the pixel driving circuit so that both the first transistor (crystalline semiconductor) and second transistor (oxide semiconductor) serve multiple functions. This multi-functionality approach allows the circuit to achieve enhanced functionality without a proportional increase in complexity, as each transistor type contributes to multiple circuit operations
Data Source
AI summary
A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.