Oxide TFT Pixel Driving Circuit Leakage Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing OLED display panels face high power consumption due to leakage current in the pixel driving circuit, which affects the efficiency and performance of the display.
Innovation Solution
The use of oxide thin film transistors and low-temperature polysilicon thin film transistors in the pixel driving circuit reduces leakage current and power consumption by incorporating their respective advantages, such as low leakage current and strong driving capability, to enhance the overall performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional transistors are used in the pixel driving circuit, then the circuit can provide sufficient driving capability, but the leakage current increases resulting in high power consumption
Solution Approach 1:
The pixel driving circuit is divided into different functional modules, each using transistors with optimized characteristics for their specific function. Switching transistors use oxide semiconductor material for low leakage, while driving transistors use low-temperature polysilicon for high driving capability, resolving the contradiction between power consumption and driving capability.
Solution Approach 2:
Different regions of the pixel driving circuit are assigned different transistor types based on local functional requirements. The switching portion uses oxide transistors with low leakage current properties, while the driving portion uses low-temperature polysilicon transistors with high current drive capability, achieving optimal performance in each local region.
2Loss of energy
If oxide thin film transistors are used for switching, then the leakage current is reduced, but the driving capability may be insufficient compared to conventional transistors
Solution Approach 1:
The circuit functionality is segmented between oxide transistors for switching operations where low leakage is critical, and low-temperature polysilicon transistors for driving operations where high current capability is needed, allowing each transistor type to operate in its optimal performance regime.
Solution Approach 2:
The pixel driving circuit employs a composite transistor architecture combining oxide semiconductor material and low-temperature polysilicon material, each contributing their superior properties to the overall circuit performance, achieving both low leakage and high driving capability.
Data Source
AI summary
The present disclosure discloses a pixel driving circuit, a pixel circuit, a display panel and a display apparatus, wherein the pixel driving circuit is used for driving a light-emitting element to emit light, and includes: a plurality of switching transistors, wherein each of the switching transistors is an oxide thin film transistor.