Oxide TFT Spacer Structure for Hydrogen and Threshold Voltage Control
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Solution Overview
Problem
Existing display devices face challenges in achieving improved element characteristics of switching transistors, particularly in terms of hydrogen concentration and channel length, which affect the performance and efficiency of the display.
Innovation Solution
A display device is designed with a specific structure that includes a substrate, semiconductor layers, gate electrodes, and spacers, where the hydrogen concentration is controlled in the spacers and interlayer insulating layers to optimize the channel region of the oxide semiconductor layer, enhancing the switching characteristics of the transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the channel length of the oxide semiconductor layer is reduced to achieve higher resolution, then the display resolution is improved, but the threshold voltage control becomes difficult and switching characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating different hydrogen concentration zones within the oxide semiconductor layer. The channel region is maintained with low hydrogen concentration to preserve threshold voltage control, while source/drain regions can have different properties. This is achieved through selective processing that protects the channel region during hydrogen introduction steps, allowing the device to achieve both short channel length for high resolution and proper threshold voltage control.
Solution Approach 2:
The patent utilizes parameter changes by controlling hydrogen concentration as a key parameter in the oxide semiconductor layer. By adjusting hydrogen concentration in the channel region, the threshold voltage can be controlled even with reduced channel length. The patent specifically introduces hydrogen into the oxide semiconductor layer in a controlled manner to modify electrical characteristics without compromising the short channel structure needed for high resolution displays.
2Reliability
If hydrogen concentration is increased in the oxide semiconductor layer to improve switching characteristics, then the on/off ratio is improved, but the threshold voltage decreases and channel control is compromised
Solution Approach 1:
The patent applies local quality by creating different hydrogen concentration zones within the oxide semiconductor layer. The channel region is maintained with low hydrogen concentration to preserve threshold voltage control, while source/drain regions can have different properties. This is achieved through selective processing that protects the channel region during hydrogen introduction steps, allowing the device to achieve both short channel length for high resolution and proper threshold voltage control.
Solution Approach 2:
The patent utilizes parameter changes by controlling hydrogen concentration as a key parameter in the oxide semiconductor layer. By adjusting hydrogen concentration in the channel region, the threshold voltage can be controlled even with reduced channel length. The patent specifically introduces hydrogen into the oxide semiconductor layer in a controlled manner to modify electrical characteristics without compromising the short channel structure needed for high resolution displays.
Data Source
AI summary
Provided are display device and method of fabricating the same. The display device comprises a substrate, a first semiconductor layer, a first gate insulating layer, a first gate electrode dispose, a first interlayer insulating layer, a first oxide semiconductor layer, a second gate insulating layer and a second gate electrode sequentially disposed on the substrate, spacers disposed on side surfaces of the second gate electrode, and a second interlayer insulating layer disposed on the spacers, wherein each of the spacers comprises a first spacer disposed to contact a side surface of the second gate electrode and a second spacer disposed on the first spacer. A concentration of hydrogen included in the first spacer is lower than a concentration of hydrogen included in the second spacer.