Crystalline Oxide Thin-Film Transistors via Spray Pyrolysis
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Solution Overview
Problem
Oxide semiconductors in thin film transistors are typically in an amorphous state, limiting their electrical properties and stability, which hinders their performance in display devices like LCDs and OLEDs.
Innovation Solution
A method involving the formation of a c-axis aligned crystalline oxide semiconductor layer through spray pyrolysis of a precursor solution containing metal precursors like indium, gallium, and zinc, with an acetate-containing additive, and subsequent plasma treatment with fluorine-containing gases to enhance electrical connectivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductors are used in amorphous state, then the manufacturing process is simple, but the electrical properties and stability are limited
Solution Approach 1:
The patent changes the crystalline state parameter of the oxide semiconductor from amorphous to c-axis aligned crystalline state. This is achieved by controlling the spray pyrolysis process parameters including precursor solution composition (metal precursors like indium, gallium, zinc with acetate-containing additives), spray temperature (200-500°C), and substrate conditions, which enables the formation of highly oriented crystalline structures with improved electrical properties while maintaining manufacturing simplicity
Solution Approach 2:
The patent replaces complex mechanical sputtering or vapor deposition processes with a chemical solution-based spray pyrolysis method. This substitution allows the oxide semiconductor layer to be deposited in a c-axis aligned crystalline state through chemical reactions in the spray solution, achieving high-quality crystalline structures without requiring complex vacuum equipment or high-energy input processes
2Reliability
If spray pyrolysis is performed at higher temperature, then the crystalline structure and electrical properties improve, but the energy consumption increases
Solution Approach 1:
The patent optimizes the spray pyrolysis temperature parameter within the range of 200-500°C to achieve the optimal balance between crystalline quality and energy consumption. By controlling this temperature parameter along with precursor solution composition and spray conditions, the process forms c-axis aligned crystalline oxide semiconductors with good electrical properties at moderate temperatures, avoiding excessive energy input
Solution Approach 2:
The patent uses composite precursor solutions containing multiple metal precursors (indium, gallium, zinc) and acetate-containing additives. This composite formulation enables the formation of complex crystalline oxide semiconductor structures with improved electrical properties at lower processing temperatures, reducing the energy required compared to using single-component precursors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the manufacture of thin film transistors with improved electrical properties and stability at a lower cost and with a simpler process, achieving high film density and reduced surface roughness, thereby enhancing their performance in display devices.
Implementation Method 1
performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor
Implementation Method 2
obtain a c-axis aligned crystalline oxide semiconductor
Implementation Method 3
supplying a fluorine-containing gas to an exposed region of the c-axis aligned crystalline oxide semiconductor to perform plasma treatment
Data Source
AI summary
Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.