Oxide Thin Film Transistor Transition Layer for Stability
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Solution Overview
Problem
Oxide thin film transistors face instability due to metal atoms from the source and drain diffusing into the oxide semiconductor active layer, combining with oxygen ions and destabilizing the device.
Innovation Solution
Incorporating a two-layer transition layer with a metal oxide protective layer and a metal layer between the oxide semiconductor active layer and the source/drain, where the protective layer is made of a metal oxide to prevent diffusion and enhance bonding, thereby improving the stability of the oxide thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal material (such as copper, titanium, molybdenum) is used for source and drain, then electrical conductivity is improved, but metal atoms diffuse into oxide semiconductor active layer and combine with oxygen ions, causing instability
Solution Approach 1:
The patent introduces a transition layer comprising a protective layer and a metal layer as an intermediary between the source/drain and oxide semiconductor active layer. The protective layer (made of metal oxide such as InOx, SnOx, ZnOx, Ga2O3, or Al2O3) acts as a barrier to prevent metal atom diffusion and electron transfer, while the metal layer provides good electrical conductivity. This intermediary structure resolves the contradiction by blocking harmful interactions while maintaining electrical performance.
Solution Approach 2:
The transition layer uses a composite structure combining a protective layer (metal oxide) and a metal layer. This composite material approach allows the system to simultaneously achieve protection against metal atom diffusion (through the oxide layer) and good electrical conductivity (through the metal layer), resolving the contradiction between stability and electrical performance.
2Reliability
If transition layer with protective layer and metal layer is added, then stability is improved by preventing metal atom diffusion, but device structure becomes more complex
Solution Approach 1:
The transition layer is segmented into two distinct functional layers: a protective layer (metal oxide) for preventing metal atom diffusion and electron transfer, and a metal layer for providing electrical conductivity. This segmentation allows each layer to perform its specific function efficiently, achieving stability improvement while keeping the structure manageable through clear functional division.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents metal atoms from the source and drain from combining with oxygen ions in the oxide semiconductor active layer, enhancing the stability and performance of the oxide thin film transistor.
Implementation Method 1
the protective layer is made of a metal oxide... which can prevent the metal atoms in material of the source and the drain from diffusing or electron-transferring into the oxide semiconductor active layer
Data Source
AI summary
The present invention provides an oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device. The oxide thin film transistor of the present invention comprises a substrate, and a gate, a gate insulation layer, an oxide semiconductor active layer, a source and a drain, which are sequentially formed on the substrate, wherein, the oxide thin film transistor further comprises a transition layer formed between the oxide semiconductor active layer and the source and between the oxide semiconductor active layer and the drain, the transition layer comprises a metal layer and a protective layer, and the protective layer is in contact with the oxide semiconductor active layer, the metal layer is arranged on the protective layer and in contact with the source and the drain, and the protective layer is made of a metal oxide.