Oxide TFT Ultraviolet Absorbing Layer Aperture Ratio

The patent applies local quality by making the light-blocking property location-specific. Instead of using a black matrix that blocks light across the entire pixel area, the invention uses an oxide semiconductor layer with high light-blocking capability only in the channel region where photocarrier generation occurs. This allows light to enter other regions of the pixel for display purposes while preventing photocarrier generation in the critical channel area, thus resolving the contradiction between photocarrier control and aperture ratio.

The patent changes the material parameter of the semiconductor layer from conventional semiconductor materials to oxide semiconductor materials. Oxide semiconductors have inherently high light-blocking capability in the visible spectrum, which transforms the channel region into an effective light barrier without requiring additional black matrix structures. This parameter change allows the channel region to simultaneously serve as both the active transistor region and the light-blocking region, eliminating the need for separate black matrix structures that would reduce aperture ratio.

The patent applies universality by making the oxide semiconductor layer perform multiple functions simultaneously. The same oxide semiconductor layer that forms the active channel of the TFT also serves as the light-blocking layer that prevents photocarrier generation. This multi-functionality eliminates the need for separate black matrix structures and their associated fabrication processes, thereby reducing manufacturing complexity and cost while achieving the same photocarrier control effect.

The patent merges the semiconductor layer and the light-blocking layer into a single oxide semiconductor layer. Instead of having separate layers for transistor operation and light blocking, the invention combines these functions into one material layer that exhibits both semiconductor properties and high light-blocking capability. This merging simplifies the device structure and reduces the number of fabrication steps required, directly addressing the cost increase issue.