Oxide Semiconductor Transistor Bottom-Gate Structure
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Solution Overview
Problem
The existing fabrication methods for thin-film transistors face challenges in filling gate oxide material between the source and drain electrodes and suffer from channel damage, limiting further miniaturization.
Innovation Solution
A semiconductor transistor device with a gate electrode, source electrode, and drain electrode directly in contact with an oxide semiconductor layer, where a control capacitor provides a control voltage to switch the device, eliminating the need for a gate oxide layer and allowing for further scaling down.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If gate oxide material is used to fill the gap between source and drain electrodes, then the transistor structure is completed, but filling difficulty and channel damage occur
Solution Approach 1:
The invention extracts and removes the gate oxide layer from the conventional transistor structure, replacing it with a bottom-gate configuration where the gate electrode is positioned beneath the semiconductor layer. This eliminates the need to fill gate oxide material into gaps between source and drain electrodes, thereby avoiding filling difficulties and channel damage while maintaining transistor functionality.
Solution Approach 2:
The invention inverts the conventional top-gate structure by placing the gate electrode at the bottom of the semiconductor layer. This bottom-gate configuration reverses the traditional arrangement, allowing the gate to control the channel from below rather than requiring overhead filling operations that cause damage.
2Length of moving object
If conventional fabrication methods are used, then transistor function is achieved, but further miniaturization is limited
Solution Approach 1:
By removing the gate oxide layer and adopting a bottom-gate structure, the invention simplifies the fabrication process, eliminating complex filling steps that limit miniaturization. This enables smaller transistor dimensions while maintaining manufacturing precision through a more straightforward fabrication sequence.
Solution Approach 2:
The invention changes the structural parameters of the transistor by inverting the gate position and removing the gate oxide layer, enabling scaling to smaller dimensions. This parameter change allows further miniaturization while maintaining acceptable manufacturing precision through the simplified bottom-gate fabrication approach.
Data Source
AI summary
A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.