Oxide Semiconductor Transistor-Capacitor Layout for Stable Low-Power ICs
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Solution Overview
Problem
Existing semiconductor devices face challenges with variations in transistor characteristics, reliability, electrical characteristics, on-state current, miniaturization, and power consumption, particularly in integrated circuits with increasing density and reduced size.
Innovation Solution
The semiconductor device incorporates a transistor, capacitor, and plug structure using oxide semiconductors with metal oxide insulators, including amorphous structures, to enhance electrical connectivity and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If oxide semiconductor transistors are used to reduce leakage current, then power consumption is reduced, but transistor characteristic variation increases
Solution Approach 1:
The patent changes the material parameter from conventional semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve ultra-low leakage current while maintaining acceptable characteristic variation through proper material selection and device结构设计
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor layers with metal oxide insulator layers (such as aluminum oxide or gallium oxide), creating a multi-material system that leverages the low leakage properties of oxide semiconductors while using the high-k insulators to stabilize transistor characteristics and reduce variation
2Productivity
If integrated circuit density is increased, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes the unique electrical properties of oxide semiconductors that allow for relaxed manufacturing tolerances compared to conventional semiconductors, enabling higher integration densities without proportionally increasing manufacturing precision requirements
Solution Approach 2:
The patent applies metal oxide insulator layers with high dielectric constants in specific regions (such as gate insulators or interlayer insulators) to locally enhance electrical performance, allowing for denser integration while maintaining signal integrity and reducing crosstalk between closely spaced circuit elements
Data Source
AI summary
A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor. The plug is electrically connected to the first conductor. The first insulator and the second insulator are each formed using a metal oxide including an amorphous structure.