Oxide Semiconductor Transistor Regions for Precise Current Control
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Solution Overview
Problem
Existing display devices face challenges in efficiently managing light-emitting components due to inadequate control over transistor performance, particularly in regions with varying metal-oxygen bond densities and oxygen vacancy levels, leading to sub-optimal current regulation.
Innovation Solution
A transistor design with a semiconductor layer divided into distinct regions, each with different metal-oxygen bond densities and oxygen vacancy levels, optimized through a combination of heat treatment and UV light irradiation processes, enhancing electrical properties such as sub-threshold swing for improved current control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor with uniform semiconductor layer is used, then the device structure is simple and easy to manufacture, but the current control capability is insufficient
Solution Approach 1:
The semiconductor layer is segmented into three distinct regions along the channel: a first region with higher metal-oxygen bond density and lower oxygen vacancy, a second region with intermediate properties, and a third region with lower metal-oxygen bond density and higher oxygen vacancy. This segmentation enables different regions to perform different functions, with the first region providing stable current control and the third region enabling high current flow, thereby resolving the contradiction between control capability and structural simplicity.
Solution Approach 2:
Different regions of the semiconductor layer are given different local qualities through controlled variations in metal-oxygen bond density and oxygen vacancy concentration. The first region has higher metal-oxygen bond density for stability, while the third region has lower density for higher conductivity. This local differentiation allows each region to be optimized for its specific function, improving overall current control while maintaining a relatively simple layered structure.
2Reliability
If the semiconductor layer has high metal-oxygen bond density throughout, then the structure is stable, but the current flow capability is reduced
Solution Approach 1:
The patent applies local quality by creating spatial variation in metal-oxygen bond density across the semiconductor layer. The first region maintains high metal-O bond density (greater than 50%) for structural stability, while the third region has lower metal-O bond density (less than 50%) to enable higher current flow capability. This local differentiation resolves the contradiction by allowing stability where needed and conductivity where required.
Solution Approach 2:
The semiconductor layer is divided into functional segments with different metal-oxygen bond densities. The first region segment provides structural stability with high bond density, while the third region segment provides current flow capability with lower bond density. The second region serves as a transition zone, creating a gradient that smoothly connects the two extremes and optimizes overall device performance.
3Productivity
If oxygen vacancy is increased in the semiconductor layer, then the current flow capability is improved, but the structural stability is reduced
Solution Approach 1:
The semiconductor layer is segmented into regions with different oxygen vacancy concentrations. The first region has lower oxygen vacancy for structural stability, while the third region has higher oxygen vacancy for improved current flow capability. This segmentation allows the device to simultaneously achieve both stability and high productivity by distributing different oxygen vacancy levels to different functional regions.
Solution Approach 2:
Different local qualities of oxygen vacancy concentration are implemented across the semiconductor layer. The first region maintains low oxygen vacancy to preserve structural integrity, while the third region incorporates high oxygen vacancy to enhance electrical conductivity and current flow. This local optimization resolves the contradiction between stability and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized transistor design enhances the ability to regulate current flow, improving the management of light-emitting elements in display devices, resulting in better performance and reliability.
Implementation Method 1
irradiating it with ultraviolet (UV) light; annealing the oxide semiconductor layer; wherein the annealing and the irradiating of the UV light are simultaneously performed
Implementation Method 2
annealing the oxide semiconductor layer; wherein the annealing and the irradiating of the UV light are simultaneously performed
Data Source
AI summary
A transistor including: a gate electrode; a semiconductor layer overlapping the gate electrode; a source electrode and a drain electrode overlapping a portion of the semiconductor layer, respectively, wherein a channel region of the semiconductor layer includes a first region and a third region, and a second region disposed between the first region and the third region, and a number of M-O bonds in the first region is different from a number of M-O bonds in the second region, wherein the M is a metal and the O is oxygen.