Oxide Semiconductor Transistor Curvature Layout for Stable Characteristics
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving small variations in transistor characteristics, high on-state current, favorable electrical characteristics, miniaturization, high integration, high reliability, and low power consumption.
Innovation Solution
A semiconductor device is designed with a specific structure including a first insulator, a first oxide, a first conductor, a second conductor, and a second oxide positioned between the conductors over the first oxide, with a second insulator and a third conductor on top. The top surface of the first oxide in one region is lower than in another region, with a curved surface having a curvature radius between 1 nm and 15 nm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional transistor structure is used, then manufacturing is simpler, but transistor characteristic variation is large
Solution Approach 1:
The patent applies local quality by creating a curved surface structure specifically in the region where the first oxide overlaps with the third conductor (gate electrode), while other regions maintain conventional flat structures. This localized curvature modification targets the critical interface region to reduce transistor characteristic variation without unnecessarily complicating the entire device structure.
Solution Approach 2:
The patent introduces a curved surface (with curvature radius between 1 nm and 15 nm) in the first oxide layer under the gate electrode region, replacing the conventional flat surface. This curvature modification improves the interface quality between the oxide semiconductor and the gate electrode, leading to reduced transistor characteristic variation and improved electrical characteristics.
2Productivity
If the transistor is miniaturized for high integration, then device density increases, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The curved surface structure in the first oxide layer provides a more gradual interface transition that is less sensitive to dimensional variations during miniaturization. This curvature helps maintain consistent electrical characteristics even as device dimensions are reduced for higher integration density.
Solution Approach 2:
The patent modifies the surface topology parameter of the first oxide layer by introducing curvature with a specific radius range (1-15 nm). This parameter change creates a more robust interface that maintains manufacturing precision during miniaturization processes.
3Reliability
If higher on-state current is achieved through material or structure changes, then electrical performance improves, but device complexity increases
Solution Approach 1:
The curved surface structure improves carrier transport at the interface between the first oxide and the third conductor, enabling higher on-state current without changing the fundamental transistor architecture or material composition significantly.
Solution Approach 2:
The patent introduces a vertical dimension modification (curvature) in the oxide layer thickness profile, creating a graded interface that improves electrical characteristics without adding lateral complexity to the device structure.
Data Source
AI summary
A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.