Semiconductor Device Oxide Transistor Discharge Path
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to thinner insulating films, increasing the risk of dielectric breakdown due to abnormal electrification, which can result in characteristic fluctuations, element deterioration, and data retention issues.
Innovation Solution
Incorporating a transistor with a first conductor, a second conductor, a third conductor, and an oxide semiconductor over a substrate, along with diode elements or capacitors, to provide a discharge path and stabilize electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If insulating films are made thinner to enable miniaturization, then device integration and density are improved, but dielectric breakdown risk increases
Solution Approach 1:
The patent applies preliminary action by providing discharge paths through diode elements connected to conductors before abnormal electrification can cause dielectric breakdown. The diode elements are pre-configured to safely discharge accumulated charges, preventing the harmful effects of electrification in miniaturized devices with thinner insulating films.
2Reliability
If discharge paths are provided to prevent dielectric breakdown, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies universality by having the diode elements serve multiple functions: they provide discharge paths for abnormal electrification prevention, while also being integrated into the existing device structure. The conductors and diode elements can serve both protective functions and circuit functions, reducing the need for separate protective components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively inhibits dielectric breakdown and element deterioration, enabling semiconductor devices to retain data for a long time with stable and reliable electrical characteristics.
Implementation Method 1
a channel formation region in the oxide semiconductor 230b between the source 242a and the drain 242b
Implementation Method 2
charged charges in the transistor 200 move to the semiconductor substrate 20 through the first diode element 10tg, the second diode element 10bg, or the third diode element 10s
Implementation Method 3
charged charges in the transistor 200 move to the first capacitor 200tg, the second capacitor 200bg, or the third capacitor 200s to be fixed thereto
Data Source
AI summary
A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, or dielectric breakdown is inhibited is provided. A first transistor, a second transistor, a third transistor, and a fourth transistor are included over a substrate; the fourth transistor includes a first conductor, a second conductor, a third conductor, and an oxide semiconductor; the first conductor is electrically connected to the semiconductor substrate through the first transistor; the second conductor is electrically connected to the semiconductor substrate through the first transistor; the third conductor is electrically connected to the semiconductor substrate through the first transistor; and the fourth conductor is electrically connected to the semiconductor substrate through the first transistor.