Oxide Semiconductor Transistor Structure for Drain Heat Dissipation
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Solution Overview
Problem
Oxide semiconductors like In--Ga--Zn-based oxide (IGZO) have low thermal conductivity, leading to accumulation of self-generated heat during high current flow in transistors, which causes variations in electrical characteristics and element degradation.
Innovation Solution
A semiconductor device structure is proposed, featuring a silicon substrate with a metal oxide transistor and conductors connected to the drain and substrate through openings, allowing heat generated on the drain side to be efficiently dissipated to the silicon substrate, which acts as a heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If oxide semiconductor is used in transistor channel formation region, then transistor can operate with high current, but self-generated heat accumulates due to low thermal conductivity
Solution Approach 1:
The patent extracts the heat dissipation function from the oxide semiconductor layer itself and transfers it to a dedicated silicon substrate heat sink. The silicon substrate is specifically designed with thermal conduction pathways and heat sink structures to extract heat away from the transistor channel region, separating the electrical function (handled by oxide semiconductor) from the thermal management function (handled by silicon substrate).
Solution Approach 2:
The patent introduces an intermediary thermal management system consisting of the silicon substrate, thermal conduction layers, and heat sink structures. This intermediary system acts as a mediator between the heat-generating oxide semiconductor transistor and the external environment, efficiently transferring heat away without directly modifying the oxide semiconductor material properties.
2Reliability
If heat is accumulated in oxide semiconductor transistor, then electrical characteristics vary and element degrades, but conventional heat dissipation structures are insufficient
Solution Approach 1:
The patent converts the harmful heat accumulation into a beneficial thermal management opportunity by designing the silicon substrate with intentional thermal conduction pathways and heat sink structures. The heat that would otherwise degrade the transistor is redirected through the silicon substrate to external heat sinks, transforming a harmful thermal effect into a controlled thermal management process that actually improves reliability.
Solution Approach 2:
The patent addresses heat dissipation by adding a vertical dimension to the thermal management system. Instead of relying solely on lateral heat spreading in the thin oxide semiconductor layer, the design creates three-dimensional thermal conduction pathways through the silicon substrate thickness, utilizing the Z-direction for efficient heat extraction to heat sinks positioned on the opposite side of the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure effectively reduces the influence of self-generated heat on the electrical characteristics and reliability of the transistors, enhancing the overall reliability of the semiconductor device.
Implementation Method 1
heat generated on the drain side to be efficiently dissipated to the silicon substrate, which acts as a heat sink
Data Source
AI summary
A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.