Oxide Semiconductor Transistor Structure for Higher Mobility
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Solution Overview
Problem
Current display devices' transistors face limitations in carrier mobility, particularly in thin film transistors used for display devices, which affect the efficiency and performance of pixel circuits in emitting light.
Innovation Solution
A transistor structure is developed with a triple-layer configuration of a conductor/semiconductor/conductor, where the semiconductor layer is made of oxide semiconductor materials like InSnGaZnO, and the conductor layers include indium tin oxide or indium zinc oxide, with specific thicknesses and configurations to enhance carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional thin film transistor structure is used, then the device complexity is low, but the carrier mobility is insufficient
Solution Approach 1:
The active layer is segmented into multiple functional layers: a first conductor layer (source/drain electrode), a semiconductor layer (channel), and a second conductor layer (source/drain electrode). This segmentation allows each layer to be optimized independently for its specific function, improving overall carrier mobility while maintaining manageable structural complexity
Solution Approach 2:
The transistor employs composite material structure with oxide semiconductor materials (such as In-Ga-Zn-O) combined with metal layers. This composite approach leverages the high carrier mobility of oxide semiconductors and the excellent conductivity of metal layers, achieving superior electrical performance
2Power
If the semiconductor layer thickness is increased, then the current flow capability improves, but the leakage current increases
Solution Approach 1:
The patent optimizes the thickness parameter of the semiconductor layer to a specific range (1 nm to 10 nm). This parameter optimization achieves a balance between allowing sufficient current flow through the channel and maintaining adequate barrier properties to prevent leakage current, resolving the contradiction between power capability and energy loss
Data Source
AI summary
A transistor is disclosed that includes an active layer and a gate electrode. The active layer includes a first conductor layer including metal atoms, a layer of semiconductor material disposed above the first conductor layer, and a second conductor layer disposed above the semiconductor material layer and including the metal atoms. The gate electrode overlaps a part of the active layer and is electrically insulated from the active layer.