Oxide Semiconductor Transistor Structure for Hydrogen Diffusion Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, excellent electrical characteristics, high on-state current, miniaturization, and low power consumption, particularly due to issues with hydrogen diffusion and impurity concentration in oxide semiconductor transistors.
Innovation Solution
A semiconductor device is designed with a transistor surrounded by an insulator that acts as a hydrogen barrier, using a conductor with nitrogen and metal that extracts hydrogen, maintaining a hydrogen concentration between 2.0×10^19 and 1.0×10^21 atoms/cm^3, and bonding hydrogen to nitrogen atoms, with heat treatment above 350°C and below 700°C to absorb hydrogen in the oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional transistor structure is used without hydrogen barrier insulator, then manufacturing process is simpler, but hydrogen diffusion into oxide semiconductor causes poor reliability and electrical characteristics
Solution Approach 1:
An insulator with hydrogen barrier property is introduced as an intermediary layer between the oxide semiconductor and the surrounding environment. This barrier insulator prevents hydrogen diffusion into the oxide semiconductor, thereby improving transistor reliability and electrical characteristics without fundamentally changing the transistor structure
Solution Approach 2:
Hydrogen is extracted from the oxide semiconductor by a conductor containing nitrogen and metal with hydrogen extraction capability. The conductor forms a region with controlled hydrogen concentration where hydrogen atoms bond to nitrogen atoms, removing harmful hydrogen from the channel formation region
2Power
If hydrogen concentration in oxide semiconductor is increased, then on-state current may improve, but electrical characteristics deteriorate due to hydrogen-induced defects
Solution Approach 1:
The hydrogen concentration in the oxide semiconductor is precisely controlled within the range of 2.0×10^19 to 1.0×10^21 atoms/cm³. This parameter optimization balances the beneficial effects of hydrogen (improved on-state current) while avoiding harmful effects (electrical characteristic deterioration), achieving both high power and reliability
3Productivity
If transistor is miniaturized to increase integration, then device density improves, but hydrogen diffusion effects become more significant causing performance degradation
Solution Approach 1:
The hydrogen barrier insulator acts as a protective intermediary that becomes increasingly important as transistor size decreases. In miniaturized devices, the surface-to-volume ratio increases, making diffusion effects more significant; the barrier insulator effectively blocks hydrogen diffusion paths that would otherwise dominate in small devices
Solution Approach 2:
The conductor is designed with specific local properties (nitrogen content and metal composition) to create a hydrogen extraction region with controlled hydrogen concentration. This local quality enhancement ensures that even in miniaturized transistors, hydrogen is effectively managed in critical regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a semiconductor device with enhanced reliability, electrical characteristics, high on-state current, miniaturization capabilities, and low power consumption by effectively managing hydrogen concentration and impurity levels, thereby stabilizing transistor performance.
Implementation Method 1
an insulator placed so as to surround the transistor, the insulator has a barrier property against hydrogen
Implementation Method 2
the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×10^19 atoms/cm³ and lower than or equal to 1.0×10^21 atoms/cm³
Implementation Method 3
at least part of hydrogen atoms included in the region is bonded to a nitrogen atom; the conductor includes nitrogen and a metal
Implementation Method 4
heat treatment above 350°C and below 700°C to absorb hydrogen in the oxide
Data Source
AI summary
A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.