Oxide Semiconductor Transistor Processing to Suppress Indium Leakage
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Solution Overview
Problem
The existing semiconductor device manufacturing methods face challenges in suppressing the leakage current of the gate insulating layer, particularly due to indium diffusion and adhesion issues during the formation of oxide semiconductor transistors, which affect the reliability and performance of the devices.
Innovation Solution
The method involves forming a semiconductor device by creating a conductive film with indium on a substrate, followed by insulating films and treatments using gases containing silicon and oxygen to clean and oxidize indium, ensuring that the semiconductor film is formed in a vacuum environment without exposing the substrate to atmospheric pressure, thereby preventing indium diffusion and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is exposed to atmospheric pressure after indium treatment, then the manufacturing process can be simplified and productivity improved, but indium diffusion and adhesion occur causing leakage current increase
Solution Approach 1:
The patent maintains a vacuum environment (inert atmosphere) throughout the manufacturing process, from substrate preparation through semiconductor film formation. This prevents indium diffusion and adhesion by eliminating exposure to atmospheric pressure, thereby suppressing leakage current in the gate insulating layer while maintaining manufacturing efficiency.
Solution Approach 2:
The patent performs vacuum treatment and semiconductor film formation in sequence without breaking the vacuum. The preliminary vacuum treatment prepares the surface for film formation, and both operations are completed before atmospheric exposure, preventing indium contamination during the critical film formation stage.
2Reliability
If indium is used in the conductive film, then the electrical conductivity is improved, but indium diffusion to the gate insulating layer causes leakage current
Solution Approach 1:
The patent uses vacuum environment to prevent indium diffusion from the conductive film to the gate insulating layer. By maintaining inert conditions throughout the process, the beneficial electrical conductivity of indium is preserved while the harmful diffusion effect is eliminated.
Solution Approach 2:
The patent quickly proceeds from substrate treatment to semiconductor film formation without exposing to atmosphere, minimizing the time window for indium diffusion. The entire critical sequence is completed in continuous vacuum, skipping any atmospheric exposure that could cause contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the leakage current of the gate insulating layer, enhancing the reliability and performance of the oxide semiconductor transistors by preventing indium-related issues during the manufacturing process.
Implementation Method 1
performing at least one treatment selected from a group including a first treatment using a first gas containing silicon (Si) and a second treatment using a second gas containing oxygen (O)
Implementation Method 2
forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure
Data Source
AI summary
A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.