Oxide Semiconductor Transistor Insulator Stack for Low Leakage Stability
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Solution Overview
Problem
Current transistors using silicon or oxide semiconductors face challenges in achieving stable electrical characteristics, low leakage current in the off state, high frequency performance, normally-off characteristics, and small subthreshold swing values, while also being reliable and efficient in terms of power consumption.
Innovation Solution
A semiconductor device structure is developed with a specific configuration including multiple insulator layers and conductors, where the first insulator contains a halogen element, and the sixth insulator is less permeable to hydrogen and water, with a halogen element such as fluorine, chlorine, or bromine, to manage water and hydrogen molecules release, enhancing the transistor's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon or oxide semiconductor transistors are used, then manufacturing is well-established, but stable electrical characteristics and low leakage current cannot be achieved
Solution Approach 1:
The patent employs a composite insulator structure consisting of multiple layers with different functions: a first insulator layer containing halogen elements (fluorine, chlorine, or bromine) to reduce water and hydrogen molecule release, a second insulator layer that is less permeable to hydrogen and water, and optionally a third insulator layer. This composite structure combines the benefits of different materials to achieve both low leakage current and manufacturing feasibility.
Solution Approach 2:
The patent applies different material properties to different regions of the insulator structure. The first insulator layer specifically contains halogen elements to suppress water and hydrogen release at the interface, while the second insulator layer provides barrier properties against hydrogen and water permeation. This localized functional differentiation addresses specific electrical characteristic issues without requiring complete material replacement throughout the structure.
2Reliability
If high-performance oxide semiconductors are used, then field-effect mobility improves, but leakage current and electrical stability remain problematic
Solution Approach 1:
The patent converts the harmful effect of water and hydrogen molecules, which cause leakage current and electrical instability, into a beneficial situation by using halogen elements (fluorine, chlorine, or bromine) in the first insulator layer. These halogen elements actively suppress the release of water and hydrogen molecules from the oxide semiconductor interface, thereby reducing leakage current and improving electrical stability while maintaining high field-effect mobility.
3Reliability
If multiple insulator layers are added to control water and hydrogen, then electrical characteristics improve, but device complexity increases
Solution Approach 1:
The patent divides the insulator structure into multiple segmented layers, each with a specific function: the first insulator layer contains halogen elements to suppress water and hydrogen release, the second insulator layer acts as a barrier to hydrogen and water permeation, and the third insulator layer provides additional protection. This segmentation allows each layer to be optimized for its specific function, achieving superior electrical characteristics while maintaining manageable structural complexity through clear functional differentiation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a transistor with stable electrical characteristics, low leakage current, high frequency performance, normally-off characteristics, and a small subthreshold swing value, resulting in a highly reliable semiconductor device.
Implementation Method 1
the first insulator contains a halogen element... to manage water and hydrogen molecules release
Implementation Method 2
the sixth insulator is less permeable to hydrogen and water
Data Source
AI summary
A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.