Oxide Semiconductor Transistor Layout for Higher Display On-Current
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Solution Overview
Problem
Display devices using light emitting diodes face limitations in data range and on-current, which affect display quality, gray image representation, and driving efficiency.
Innovation Solution
A display device design featuring a transistor with a lower conductive layer having protrusions and trenches, an oxide semiconductor layer, and a gate electrode, which increases the data range and on-current, enhancing display quality and driving efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a conventional transistor structure is used, then the device complexity is low, but the data range and on-current are limited
Solution Approach 1:
The lower layer is divided into a body portion and multiple protrusions, where each protrusion can be independently positioned and sized. This segmentation allows the total conductive area to be increased while maintaining a manageable structural complexity through modular design
Solution Approach 2:
The protrusions extend in the first direction from the body portion, adding dimensional complexity to the lower layer structure. This dimensional expansion increases the overlapping area with the channel region without simply enlarging the planar footprint, thereby increasing on-current while controlling device area
2Quantity of substance
If the lower layer width is increased to increase on-current, then the on-current increases, but the area occupied by the transistor increases
Solution Approach 1:
Instead of uniformly increasing the lower layer width in all directions, protrusions are strategically positioned to extend in the first direction only where needed to overlap with the channel region. This targeted dimensional expansion increases the effective conductive area for higher on-current while minimizing the overall transistor footprint
Solution Approach 2:
The protrusions are positioned to specifically overlap with the channel region in the plan view, creating localized areas of enhanced conductivity where they are most needed. This local quality approach ensures that the increased lower layer width contributes directly to on-current enhancement rather than simply increasing overall device area
3Adaptability or versatility
If the number of protrusions is increased to increase data range, then the data range increases, but the manufacturing precision requirements increase
Solution Approach 1:
The lower layer is segmented into multiple protrusions that can be independently formed and positioned. This segmentation allows the data range to be increased by adding more protrusions while maintaining manufacturing feasibility through standardized formation processes for each protrusion unit
Solution Approach 2:
The protrusions may be asymmetrically positioned relative to the body portion, with different numbers or positions on opposite sides. This asymmetric design allows flexible optimization of the data range while accommodating manufacturing constraints, as not all protrusions need identical positioning precision
Data Source
AI summary
An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.