Oxide Semiconductor Transistor Layout for Integrated Pixel and Driver Circuits

The patent applies local quality by forming two distinct types of transistors on the same substrate: first transistors with oxide semiconductor layers having crystalline regions for high on/off ratio in pixel portions, and second transistors with oxide semiconductor layers having amorphous regions for high operation speed in driver circuits. Each transistor type is optimized for its specific functional requirements while coexisting on a single substrate.

The patent changes the structural parameters of the oxide semiconductor layers to resolve the contradiction between aperture ratio and definition. By controlling the crystalline/amorphous state and thickness of the semiconductor layers, the invention enables high aperture ratios while maintaining sufficient definition through the optimized transistor characteristics.

The patent uses composite material structures with different oxide semiconductor layer configurations. First transistors use oxide semiconductor layers with crystalline regions for high reliability, while second transistors use oxide semiconductor layers with amorphous regions for high mobility. This composite approach allows optimization of each transistor type for its specific performance requirements.