Oxide Semiconductor Transistor Layout to Isolate High-Resistance Regions

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Solution Overview

Problem

In semiconductor devices, particularly in liquid crystal displays, the integration of oxide and silicon semiconductors in pixel and drive circuits leads to challenges in maintaining reliability due to heat generation and degradation in high-resistance areas, which affects the transistor's performance and longevity.

Innovation Solution

The semiconductor device design incorporates specific area configurations with varying resistance levels and impurity concentrations in an oxide semiconductor, where high-resistance areas are isolated from current paths to suppress heat generation and degradation, using ion implantation and gate electrode masking techniques to define these regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high-resistance areas are included in the oxide semiconductor structure, then transistor performance is improved, but heat generation and degradation occur reducing reliability

Engineering Contradiction:

Improvetransistor reliabilityVSAvoidheat generation

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The oxide semiconductor is divided into multiple regions with different resistance characteristics: a first area with high resistance and second/third areas with low resistance. This segmentation allows current to flow only through the low-resistance regions, preventing heat generation in high-resistance areas while maintaining the beneficial effects of high-resistance regions for transistor performance.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the oxide semiconductor are assigned different resistance properties tailored to their specific functions. The first area maintains high resistance for performance enhancement, while the second and third areas have low resistance to conduct current without excessive heat generation, creating local optimization of electrical properties.

Inventive Principle:

Principle #3Local quality

2Duration of action of moving object

If current flow is allowed through high-resistance areas, then transistor operation is enabled, but degradation occurs reducing lifespan

Engineering Contradiction:

Improvetransistor lifespanVSAvoiddegradation

Core Design Contradiction:

Duration of action of moving objectVSObject-generated harmful factors

Solution Approach 1:

The harmful current flow path through high-resistance areas is extracted and removed by creating low-resistance alternative paths (second and third areas) that bypass the high-resistance first area. This extraction eliminates the degradation mechanism while preserving the transistor's operational functionality.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The high-resistance first area, which would normally cause heat and degradation, is converted into a beneficial structure that enhances transistor performance. By surrounding it with low-resistance regions, the high-resistance area contributes to performance improvement without causing harmful effects.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Reliability

If oxide semiconductor is used in pixel circuit, then display performance is improved, but heat generation affects overall device reliability

Engineering Contradiction:

Improvedisplay device reliabilityVSAvoidheat generation

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

The oxide semiconductor structure is segmented into high-resistance and low-resistance regions, allowing current to be confined to low-resistance paths. This segmentation reduces overall heat generation in the pixel circuit while maintaining the performance benefits of oxide semiconductor technology in display devices.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses heat generation and degradation in high-resistance areas, enhancing the reliability and performance of the transistor by preventing current flow through these susceptible regions, thus maintaining the transistor's characteristics and extending its lifespan.

Implementation Method 1

using ion implantation and gate electrode masking techniques to define these regions

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS12176438B2Semiconductor device

Publication Date: 2024.12.24 MAGNOLIA WHITE CORP

AI summary

According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.